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A comparison of electromigration failure of metal lines with fracture mechanics

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摘要在一台半导体设备构造一根相连的金属线的原子被电子流动在高密度搬运。这现象被称为electromigration，它可以引起线失败。以便描绘electromigration失败，比较研究被执行，一些典型现象为薄、大的结构由破裂力学对待。薄结构的一个例子，被破裂力学对待，是硅石为通讯系统的光纤维。在由electromigration的一根金属线的损坏生长在光纤维使遭到了到静态的疲劳的硅石与裂缝生长比较被描绘。另外，简短比较在大结构在electromigration失败和一些破裂现象之间被做。

DOI pj0x09oyjy/1150127

作者 Hiroyuki Abe;Mikio Muraoka;Kazuhiko Sasagawa;Masumi Saka

机构地区不详

出处《力学学报：英文版》 2012年3期

关键词断裂力学电迁移金属线失效二氧化硅光纤大型结构

分类 [理学][力学]

出版日期 2012年03月13日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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力学学报：英文版

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断裂力学电迁移金属线失效二氧化硅光纤大型结构

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