摘要
Themagnetoresistanceeffectofap–njunctionunderanelectricfieldwhichisintroducedbythegatevoltageatroomtemperatureisinvestigatedbysimulation.Asauxiliarymodels,theLombardiCVTmodelandcarriergenerationrecombinationmodelareintroducedintoadrift-diffusiontransportmodelandcarriercontinuityequations.Alltheequationsarediscretizedbythefinite-differencemethodandtheboxintegrationmethodandthensolvedbyNewtoniteration.Takingadvantageofthosemodelsandmethods,anabruptjunctionwithuniformdopingisstudiedsystematically,andthemagnetoresistanceasafunctionofdopingconcentration,SiO_2thicknessandgeometricalsizeisalsoinvestigated.Thesimulationresultsshowthatthemagnetoresistance(MR)canbecontrolledsubstantiallybythegateandisdependentonthepolarityofthemagneticfield.
出版日期
2016年04月14日（中国期刊网平台首次上网日期，不代表论文的发表时间）
