Theoretical Study on Adsorption and Diffusion of N Atoms on Cu Low-index Surface

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摘要 TheadsorptionanddiffusionofNatomsonthethreelow-indexCuplaneswerestudiedusing5-parameterMorsepotential(5-MP)method,andthebesttheory-experimentagreementwasobtained.NatomsofCu(100)surfacesitonthefourfoldhollowsitewiththeverticalheightof0.018nmcloselycoplanarwiththetopmostcopperlayer,andthefourCu-Nbondlengthsare0.182nmandthefifthCu-Ndistanceis0.199nm.ForCu(111)system,theexistenceofaberrantCu(100)reconstructedstructureisapprovedathighercoverage,andatlowcoveragethestructureisalmostanidealCu(111)surfacestructure.WithrespecttoCu(110)system,theNatomsareadsorbedatLBandH3sites,notatSBsite.ThediffusionpassageanddiffusionbarrierofadsorbedNatomswerealsostudied.
机构地区 不详
出处 《中国化学:英文版》 2004年11期
出版日期 2004年11月21日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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