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Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation of Ⅴ/Ⅲ Ratio

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DOI 6jrvgew5d5/644339

作者张洁;郭丽伟;邢志刚;葛炳辉;丁国建;彭铭曾;贾海强;周均铭;陈弘

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出处《中国物理快报：英文版》 2008年12期

关键词薄膜结构物理学研究

分类 [理学][物理]

出版日期 2008年12月22日（中国期刊网平台首次上网日期，不代表论文的发表时间）

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来源期刊

中国物理快报：英文版

中国物理快报：英文版

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薄膜结构物理学研究

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