摘要
Withthedevelopmentofhighpowerultrafastlaserpassivelymode-lockedbyasemiconductorsaturableabsorbermirror(SESAM),thedamagethresholdanddegenerationmechanismoftheSESAMbecomemoreandmoreimportant.OnewaytoreducethemaximumelectricfieldinsidetheactivepartoftheSESAMistheuseofadielectriccoatingonthetopofthesemiconductorstructure.WithFresnelformula,opticaltransfermatrix,andopticalthinfilmtheory,theelectricfielddistributionandreflectancespectrumcanbesimulated.WeintroducethedesignprinciplesofSESAMincludingthedependenceofreflectancespec-trumondielectricfunctionofabsorber,andinvestigatethedependencesoftheelectricfielddistribution,modulationdepth,reflectancespectrum,andtherelativevalueofincidentlightpoweratthetopquantumwellofSESAMonthenumberofSiO_2/Ta_2O_5layers.
出版日期
2009年09月19日(中国期刊网平台首次上网日期,不代表论文的发表时间)