简介:BasedonthesinglebiasingelectrodeexperimentstooptimizetheconfinementofplasmainthedeviceofKT-5Ctokamak,dual-biasingelectrodeswereinsertedintotheKT5Cplasmaforthefirsttimetoexploretheenhancingeffectsofbiasingandthemechanismsofthebiasing.Bymeansofapplyingdifferentcombinationsofbiasingvoltagesontothedualelectrodes,thechangesofE_r,whicharethekeyfactorforboostinguptheE_r×Bflowshear,wereobserved.Thetimeevolutionshowedthattheinnerelectrodeplayedamajorroleindual-biasing,whichdrewlargercurrentthantheouterone.Theouterelectrodeproducedlittleinfluence.Itturnedoutthatthedual-biasingelectrodeswereaseffectiveasasingleoneinimprovingtheplasmaconfinement,forthemechanismofbiasingwasessentiallyanedgeeffect.
简介:Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.