简介:Alow-thresholdRamaneffectinakilowattytterbium-dopednarrowbandfiberamplifiersystemisreported.TheRamanStokeslightat1120nmisachievedwiththetotaloutputpowerofonly~400W,indicatingthattheRamanthresholdofthiskilowattcodirectionalpumpedcontinuouswavefiberamplifierismuchlowerthanthepredictedvalueestimatedbytheclassicformula.Tofigureoutthemechanismofthisphenomenon,simulationsbasedonthegeneralstimulatedRamanscattering(SRS)modelareanalyzedindicatingthatthekeyfactoristhecouplingbetweenfour-wavemixing(FWM)andSRS.Thesimulationresultsareingoodagreementwithourexperiments.
简介:Alightpurplishredsapphireisheattreatedinanairtightcrucible.Thesamplechangeslittleincolorafterreceivingheattreatmentat1100°C,butturnstolightblueandblueafterbeingtreatedat1200°Cand1300°C,respectively.Beforeheating,theUV-VISabsorptionspectraofthesamplearedominatedbythe551nmbroadabsorptionbandcontributedbythed-electrontransition~4A_2→~4T_2ofCr~(3+).Afterheating,theUV-VISabsorptionspectraaredominatedbythe563nmbroadabsorptionbandcontributedbytheintervalencechargetransferofFe~(2+)-Ti~(4+).ThexrayphotoelectronspectroscopytestrevealsthattheFe~(2+)andTi~(4+)ioncontentsincreasewithincreasingtemperature.ThesapphirechangingfromlightpurplishredtoblueintheheatingprocessisowingtothefactthattheFe~(2+)andTi~(4+)contentsgrowandtheintervalencechargetransferofFe~(2+)-Ti~(4+)selectivelyabsorbsUV-VISlight.
简介:Inthiswork,wereportabroadbandterahertzwavemodulatorbasedonatop-gategraphenefieldeffecttransistorwithpolyimideasthegatedielectriconaPETsubstrate.ThetransmissionoftheterahertzwaveismodulatedbycontrollingtheFermilevelofgrapheneviathepolyimideasthetop-gatedielectricmaterialinsteadofthetraditionaldielectricmaterials.Itisfoundthattheterahertzmodulatorcanachieveamodulationdepthof~20.9%withasmalloperatinggatevoltageof3.5Vandalowinsertionlossof2.1dB.