简介:以电子电工领域低温试验为例,对相关实验室进行了检测能力的考察,分析了比对数据,使相关实验室进一步了解自身的检测能力、整个行业的检测水平以及所处的行业位置。
简介:ReactiveionetchingcharacteristicsofGaAs,GaSb,InPandInAsusingCl2/Arplasmahavebeeninvestigated,itisthat,etchingratesandetchingprofilesasfunctionsofetchingtime,gasflowratioandRFpower.Etchratesofabove0.45μm/rinand1.2μm/rinhavebeenobtainedinetchingofGaAsandGaSbrespectively,whileveryslowetchrates(<40nm/rin)wereobservedinetchingofIn-containingmaterials,whichwerelinearlyincreasedwiththeappliedRFpower.EtchedsurfaceshaveremainedsmoothoverawiderangeofplasmaconditionsintheetchingofGaAs,InPandInAs,however,werepartlyblackenedinetchingofGaSbduetoaroughappearance.