简介：洛杉机设计工作室FELTMARK最近在KICKSTARTER上带来了名为'ELLUMSOLAR'的项目,一个不一般的智能灯具。选用硬白枫及黑胡桃制作,每个灯都呈片状,长宽与名片相近,方便作为移动光源随身携带、走哪用哪,同时它也配备有底座,可以通过内置磁铁固定在底座上作家居照明。虽然是小巧,但亮度足为作为台灯使用。这款灯通过太阳能面板无线充电,充满一次就可用六个月之久,由于LED灯板和太阳能面板一起巧妙地隐藏在底部,因此ELLUMSOLAR就有一个简洁和令人爱不释手的外观。除此外,它也是一款智能灯,既

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简介：敏化染料的太阳能电池(DSC)在于有nanoparticulated半导体，sensitizers，电解质和相反的电极(CE)的几differentmaterials:photoanodes的联合。每材料为CE的主要功能是把电子转移到氧化还原作用电解质和regenerate碘化物离子的太阳能intoelectricity.The的变换执行特定的任务。GE的工作主要集中于运动表演的研究和传统的CE的稳定性改进DSC的全面效率，寻求新奇设计概念或新材料。在这评论，发展和研究不同CE材料和他们的电气化学的表演进行，并且这些问题被讨论。

简介：Aseriesofsolarradiationtestsforthepolytetrafluoroethylene(PTFE)bulkandfilmsampleswerecarriedoutusingQ-SUNXE-3-HSCtypeSolarRadiationSimulator,withthetestparametersasfollows:radiationintensityis1120W/m~2,temperatureis55℃andhumidityis70%RH.Surfacemorphology,compositionandmicrostructureofthePTFEsamplesbeforeandafterradiationtestswerecharacterizedcontrastively.EffectofsolarradiationonthetribologyandwettingpropertiesofPTFEwerealsostudiedbytribometerandcontactangletester,respectively.Theresultsshowthat,forradiatedPTFE,surfaceroughness,therelativecontentofCelement,thefrictioncoefficientsandthecontactanglewithwaterincreasedinvaryingdegrees.Inconclusion,theobviouschangeinPTFEsamplescanbemainlyattributedtobreakof(CFx)-CbondsafterbombardmentofhighenergyUVphotons,whichcausesthelossofF-richgroups,oxidation,crosslinkingandrestructuringofactiveunsaturatedgroups.

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简介：Themetalorganicvaporphaseepitaxy(MOVPE)growthofindiumgalliumnitride(InGaN)hasbeendiscussedindetailtowardsthefabricationofsolarcell.TheInGaNfilmwithIncontentsupto0.4aresuccessfullygrownbycontrollingthefundamentalgrowthparameterssuchastheprecursorgasflowrates,temperatureetc.TheformationofmetallicInoriginatesfromthehighervalue(0.74)oftrimethylindium/(trimethylindium+triethylgallium)(TMI/(TMI+TEG))molarratiowithlow(4100)V/Ⅲweightmolarratiowhilethelowervalue(0.2)ofTMI/(TMI+TEG)causesthephaseseparation.Itisalsonecessarytocontrolthegrowthrateandepitaxialfilmthicknesstosuppressthephaseseparationinthematerial.ThecrystallinequalityofgrownfilmsisstudiedanditisfoundtobemarkedlydeterioratedwithincreasingIncontent.ThelatticeparametersaswellasthethermalexpansioncoefficientmismatchbetweenGaNtemplateandInGaNepi-layerareprimarilyconsideredasthereasonstodeterioratethefilmqualityforhigherIncontent.ByusingIn0.16Ga0.84Nfilms,ann+-phomo-junctionstructureisfabricatedon0.65mmGaNtemplate.Forsuchadevice,theresponsetothelightillumination(AM1.5)isobservedwithanop-ncircuitvoltageof1.4Vandtheshortcircuitcurrentdensityof0.25mA/cm2.Toimprovetheperformanceaswellasincreasesolarphotoncapturing,thedeviceisfurtherfabricatedonthickGaNtemplatewithhigherIncontent.TheIn0.25Ga0.75Nn+-pjunctionsolarcellisfoundbetterperformancewithanop-ncircuitvoltageof1.5Vandtheshortcircuitcurrentdensityof0.5mA/cm2.ThisistheInGaNp-nhomo-junctionsolarcellwiththehighestIncontenteverreportedbyMOVPE.

简介：Quasi-solid-statedye-sensitizedsolarcells(DSCs)werepreparedusinggelelectrolytegelatedbypoly(ethylene-oxide)(PEO)withdifferentmolecularweight.WiththeincreaseinPEOmolecularweight,theshortcircuitcurrentdensities(Jsc)increasesignificantly,whichisrelatedtotheincreaseinI-diffusionduetotheincreaseinfreevolumeofgelelectrolyte.However,onlyaslightincreaseinopenvoltage(Voc)isobserved,whichisexplainedbythedecreaseindarkcurrentarisingfromthereductionoftriiodide(I3-)byconductionbandelectrons.

简介：ForimprovingthepropertiesofSiC-mullitecompositeceramicsusedforsolarsensiblethermalstorage,MnO_2wasintroducedassinteringadditivewhenpreparing.ThecompositeceramicsweresynthesizedbyusingSiC,andalusite,α-Al_2O_3asthestartingmaterialswithnon-contactgraphite-buriedsinteringmethod.PhasecompositionandmicrostructureofthecompositeswereinvestigatedbyXRDandSEM,andtheeffectofMnO_2onthepropertiesofSiCcompositeswasstudied.ResultsindicatedthatsamplesSM1with0.2wt%MnO_2additionachievedtheoptimumproperties:bendingstrengthof70.96MPa,heatcapacityof1.02J·(g·K)-1,thermalconductivityof9.05W·(m·K)-1.ProperadditionofMnO_2wasfoundtoweakenthevolumeeffectofthecompositesandimprovethethermalshockresistancewithanincreasedrateof27.84%forbendingstrengthafter30cyclesofthermalshock(aircoolingfrom1100℃toRT).

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简介：CdSe/CdS半导体量点共同敏化TiO2nanorod数组在透明的传导性的做氟的符号的听氧化物(FTO)上被制作使用热水、连续的离子的层吸附和反应(SILAR)过程的底层。样品的结构、词法的性质被X光检查描绘衍射(XRD)，地排放扫描电子显微镜学(FESEM)，和传播电子显微镜学(TEM)。结果显示CdSe/CdSQD在TiO2nanorods的表面上是一致地涂的。轻吸收边的移动被拿紫外可见的吸收系列监视。与TiO2nanorod数组的吸收系列相比，CdSe/CdSQD的免职转移吸收边到更高的波长。当在量点的co-sensitizers敏化太阳能电池(QDSSC)，在CdSe/CdS/TiO2nanorod数组的可见光的区域的提高的轻吸收显示CdSe/CdS层能行动。由优化CdSe层免职周期，5.78mA/cm2的光电流，0.469V的开的电路photovoltage和变换，1.34%的效率在100mw/cm2的照明下面被获得。

简介：Thecounterelectrode(CE)prominenceindye-sensitizedsolarcells(DSSCs)isundisputedwithresearchgearedtowardsreplacementofPtwithviablesubstituteswithexceptionalconductivityandcatalyticactivity.Herein,wereportthereplaceableCEwithbetterperformancethanthatofPt-basedelectrode.ThechemistrybetweenthegrapheneoxideandicetemplatesleadstocellularformationofreducedgrapheneoxidethatachievesgreaterconductivitytotheCE.Thesimultaneousgrowthofactiveedge-orientedMoS2ontheCEthroughCVDpossesseshighreflectivity.HighreflectiveMoS2trendstoincreasetheelectroactivitybyabsorbingmorephotonsfromthesourcetodyemolecules.Thus,thesynergisticeffectoftwomaterialswasfoundtoshowcasebetterphotovoltaicperformanceof7.6%against7.3%fortraditionalplatinumCE.

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简介：Theuniformcauliflower-likeZnOfilmsweredepositedontheconductingsubstratebyachemicalbathdepositioninurea/watersolution.ThefilmstructureandmorphologywerecharacterizedbyX-raydiffraction,thermogravimetricdifferentialthermalanalysis,energydispersivespectroscopy,selectedareaelectrondiffraction,fieldemissionscanningelectronmicroscopyandhighresolutiontransmissionelectronmicroscopy.TheaveragediameterofZnOnanoparticlesandthepetalthicknesswere25nmand8mm,respectively.Dyesensitizedsolarcellsbasedonthecauliflower-likeZnOfilmelectrodeshowedtheshort-circuitcurrentdensityof6.08mA/cm2,theopen-circuitphotovoltageof0.66V,thefillfactorof0.55andtheoverallconversionefficiencyof2.18%.TheequivalentcircuitofcellsbasedontheZnOfilmelectrodeswasmeasuredbytheelectrochemicalimpedancespectroscopy.Furthermore,theanalysisofequivalentcircuitprovidedtherelationshipbetweenthecellperformanceandtheinterfacialresistance,suchastheshuntresistanceandtheseriesresistance.