简介：

简介：

简介：Inordertotransfertheheatfromthearmortothecoolant,tungstenhastobeconnectedwithacopperheatsink.Thejointtechnologyisthemostcriticalissueformanufacturingplasmafacingcomponents.Consequently,thereliabilityofthejointsshouldbeverifiedbyagreatnumberofhigh-heat-flux（HHF）teststosimulatetherealloadconditions.W/CubrazedjointtechnologywithsliverfreefillermetalCuMnNihasbeendevelopedatSouthwesternInstituteofPhysics（SWIP）.Screeningandthermalfatiguetestsofonesmall-scaleflattileW/CuCrZrmockupwereperformedona60kWelectron-beamMaterialtestingscenario（EMS-60）constructedrecentlyatSWIP.Themodulesuccessfullysurvivedscreeningtestwiththeabsorbedpowerdensity(Pabs)of2MW/m2to10MW/m2andthefollowing1000cyclesatPabsof7.2MW/m2withouthotspotsandoverheatingzonesduringthewholetestcampaign.MetallurgyandSEMobservationsdidnotfindanycracksatbothsidesandtheinterface,indicatingagoodbondingofWandCuCrZralloy.Inaddition,finiteelementsimulationsbyANSYS12.0underexperimentalloadconditionswereperformedandcomparedwithexperimentalresults.

简介：Inthisstudy,tungsten(W)wascoatedonacopper(Cu)substratebyusingdouble-glowdischargetechniqueusingapureWpanelasthetargetandargon(Ar)asthedischargeandsputteringgas.ThecrystalstructureoftheWcoatingwasexaminedbyX-raydiffraction(XRD).Scanningelectronmicroscopy(SEM)wasperformedwithcross-sectionimagestoinvestigatethepenetrationdepthofWintotheCubody.Additionally,thepropertiesofwearabilityresistance,corrosionresistanceandmechanicalstrengthoftheWcoatedCumatrixwerealsomeasured.Itisconcludedthatindouble-glowplasma,WcoatedCucanbefacilelyprepared.ItisnoticedthatthetreatmenttemperatureheavilydominatesthepropertiesoftheW-Cucomposite.

简介：给出了北京正负电子对撞机（BEPC）同步辐射新组装的3W1Wiggler束斑强度分布及光子束流的测量结果，并与理论计算作了比较，两者得出了一致的结果。

简介：Chemicalvapordeposition-tungsten(CVD-W)coatingcoveringthesurfaceoftheplasmafacingcomponent(PFC)isaneffectivemethodtoimplementthetungstenmaterialasplasmafacingmaterial(PFM)infusiondevices.ResidualthermalstressinCVD-Wcoatingduetothermalmismatchbetweencoatingandsubstratewassuccessfullysimulatedbyusingafiniteelementmethod(ANSYS10.0code).Thedepositionparametriceffects,i.e.,coatingthicknessanddepositiontemperature,andinterlayerwereinvestigatedtogetadescriptionoftheresidualthermalstressintheCVD-Wcoating-substratesystem.AndtheinfluenceofthesubstratematerialsonthegenerationofresidualthermalstressintheCVD-WcoatingwasanalyzedwithrespecttotheCVD-WcoatingapplicationasPFM.ThisanalysisisbeneficialforthepreparationandapplicationofCVD-Wcoating.

简介：Moleculardynamicssimulationswereperformedtostudytheinteractionbetweenatomichydrogenandsiliconcarbide.Inthepresentstudy,wefocusontheeffectofthesurfacetemperatureonHinteractingwithsiliconcarbide.ThesimulationresultsshowthattheretentionofHatomsinthesampledecreaseslinearlywithincreasingsurfacetemperature.ThedepthprofileanalysisshowsthatthesampleismodifiedbyHbombardment,andthedensityofHatomsisgreaterthanthoseofSiandCatomsneartheinterfaceregionbetweentheH-containingregionandthebulk.However,nearthesurfaceregionthedensitiesofH,SiandCatomsarealmostequivalent.Inthemodifiedlayer,thebondsconsistofSi-CandSi-HandC-H.ThefractionofSi-Cbondsisthegreatest.OnlyafewC-Hbondsarepresent.

简介：Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.

简介：

简介：TheaccumulationofHeonaWsurfaceduringkeV-Heionirradiationhasbeensimulatedusingclusterdynamicsmodeling.Thisisbasedmainlyonratetheoryandimprovedbyinvolvingdifferenttypesofobjects,adoptingup-to-dateparametersandcomplexreactionprocesses,aswellasconsideringthediffusionprocessalongwithdepth.Thesenewfeaturesmakethesimulatedresultscompareverywellwiththeexperimentalones.Theaccumulationanddiffusionprocessesareanalyzed,andthedepthandsizedependenceoftheHeconcentrationscontributedbydifferenttypesofHeclustersisalsodiscussed.TheexplorationofthetrappinganddiffusioneffectsoftheHeatomsishelpfulinunderstandingtheevolutionofthedamagesinthenear-surfaceofplasma-facingmaterialsunderHeionirradiation.

简介：

简介：本文介绍了BSRF4W1B束线及XAFS实验站八五改造工程的目标，主要工作，及改进后该实验系统达到的各项主要技术指标及运行状态。

简介：利用角分辨紫外光电子谱对乙烯和乙炔气体在Ru(1010)表面的吸附及与K的共吸附的研究结果表明：当衬底温度超过200K，乙烯即发生脱氢反应，σCH和σCC能级均向高结合能方向移动。在室温下，σCH和σCC能级位置与乙炔在Ru(1010）表面的吸附时的分子能级完全一致。乙烯发生脱氢反应后的主要产物为乙炔。衬底温度从120K到室温，Ru(1010）表面上乙炔的σCH和σCC能级均未发现变化。室温下乙炔仍然可以在Ru(1010）表面以分子状态稳定吸附。在有K的Ru(1010）表面上，室温时σCC谱峰几乎。碱金属K的存在促进了乙炔的分解。

简介：本文扼要介绍了光束线真空控制保护系统的设计思想、设计要求、系统的作用和某些改进。此外，系统在设计了上采用了新技术－可编程序控制器（PLC），使控制系统的可靠性和灵活性得到了进一步的提高。研制这个系统的主要目的是，当光束线上出现（由铍窗或波纹管等偶然破裂引起的）灾难性真空事故时，能够有效地保护北京正负电子对撞机中的大型超高真空装置－电子储存环的真空系统不会遭到这种灾难的破坏，使其安全运行。本光束线的真空控制保护系统于1996年投入试运行，于1998年年底通过院级鉴定和验收。

简介：

简介：

简介：

简介：本真空控制保护系统是为北京同步辐射装置（BSRF）上的3W1高功率（总功率为2.54W）扭摆磁铁（Wiggler)光束线（包括前端区、3W1A和3W1B）而设计和建造的。主要建造目的是，保护北京正负电子对撞机（BEPC）电子储存环的超高真空系统和其它光束线不要受到在某一条光束线上突然发生的灾难性真空事故的破坏，以及保护无水冷却和冷却水意外中断了的光束线部件不要被扭摆磁铁发射出来的高功率同步辐射所损坏。此外，在活动水冷挡光罩关闭之前，为了防止快速阀的阀板因过热而被损坏，在快速阀中使用了一种熔点温度为1680℃的钛合金阀板。为了给扭摆磁铁光束线提供一个可靠的真空控制保护系统，系统设计是以F1－60MR型可编程序控制器（PLC）为基础的，PLC负责管理系统的状态监测、真空联锁、控制、自动记录和故障报警等。本文叙述了系统的设计。

简介：目前，北京同步辐射装置4W1A束线的双晶单色器存在着调节困难、单色光出口不固定等问题，本文对其中原因进行了讨论，并提出一种新型结构的双晶单色器。此单色器具有调节简单、波长切换方便等优点，并实现了单色光固定出口。从而能够大大缩短调光时间，提高4W1A束线专用光的用光效率。

简介：