简介：

简介：精力层次，波浪功能和秒顺序非线性的危险性被基于寓言、非寓言的乐队使用一个不对称的模型在GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As不对称的量井(AQW)计算。当在更宽的井在狭窄的量井并且在更高的躺subband边分析现象时，non-parabolicity的影响不能被忽视。在两倍回声(医生)下面调节的数字结果表演，secondorder差别频率产生(DFG)和光校正(或)分别地，在AQW的产生危险性到达2.5019m/V和13.208m/V它比体积GaAs的那些大得多。而且，我们计算AQW的吸收系数并且发现二泵波长对应于最大的吸收，因此适当的泵横梁必须被选择产生兆兆赫(THz)由DFG的放射。

简介：Usingasimpletwo-parameterwavefunction,wecalculatevariationallythebindingenergyofpositivelyandnegativelychargedexcitonsinGaAs/AlxGa1-xAsquantumwellsforwellwidthsfrom10to300A.Weconsidertheeffectofeffectivemass,dielectricconstantmismatchinthetwomaterials,andthewholecorrelationamongtheparticles.Theresultsarediscussedandcomparedindetailwithpreviousexperimentalandtheoreticalresults,whichshowfairagreementwiththem.

简介：改进了一种从头计算方法—共轭梯度方法,研究了超晶格GaAs/AlxGa1-xAs的电子结构.根据超晶格的基本方程,在固定电子密度n(z)下,求解了基本方程的本征值和本征函数,并由它们组成新的n(z),重复此过程直到得自洽解.另按超晶格基本方程的具体情况,对每个kz独立地应用了共轭梯度方法,此可大大节省与Gram-Schmit正交化有关的时间.计算了超晶格的两个最低子能带之间的能量差和Fermi能量,其模拟计算的结果与对应的实验数值一致

简介：Zinchasbeendiffusedinton-typeInxGa1-xAs,InPandGaAsinclosedam-poules,andtheexperimentaldataforInxGa1-xAsrarelyreportedpreviouslyhavebeenob-tained,TheoreticallythelinearrelationsipbetweenlogarithmicdiffusioncoefficientlnDandthecompositionxhasbeendemonstrated,whichisingoodagreementwiththeexperimentalresults.ThecalculateddiffusionjunctiondepthforInGaAsbasedonthediffusionmodelinwhichD^∝c^2isassumedalsoagreeswellwiththatoftheexperment,Finallytheoveralldiffusiontimeinamultiayerheterostructurewasapproximatedast=(∑√-ti）^2.

简介：Anovelhorizontalpush-pullmulti-substrateepitaxyboatwiththreeseparatecellsisintroducedinthisarticle,withmulti-substrateLPEprocessingisfeasibleinhorizontalLPEfurnace.TheprocessesofLPEAlxGa1-xAs/GaAssolarcellsarestudiedandtheefficiencyofthesolarcellsachieved19.8%(AM0,25℃,120mW/cm^2).

简介：GaxIn1-xAs1-ySbyalloyshavebeengrownbyatmosphericpressureMOCVDonn-GaSb（Te-doped）substrate.Thesohdcompositionwasdeterminedbyusingelectronmicroprobe.ThealloysofGalnAsSbwithcompositioninmiscibilitygapweresuccessfullygrown.TheopticalpropertiesofGaxIn1-xAs1-ySbylaverswerecharacterizedbythephotoluminescenceandtheinfraredabsorption.Thespectralresponsesofp+-GaInAsSb/p-GaxIn1-xAs1-ySby/n-GaSbdetectorsshowedwavelengthcutoffat2.4μmanddetectivity-D*=5×108cmHz1/2/Watroomtemperature.

简介：Athree-dimensionalmodelofGaAs/A1GaAsquantumdoubleringsinthelateralstaticelectricfieldisinvestigatedtheoretically.Theeigenvalueproblemwiththeeffective-massapproximationissolvedbymeansofthefinite-elementmethod.Theenergylevelsandwavefunctionsofquantum-confinedelectronsandheavyholesareobtainedandshowanagreementwithourprevioustheoreticalandexperimentalstudies.ItisshownintheapproximationofneglectingtheCoulombattractionbetweentheelectronandheavyholethatarelativelylargeStarkshiftofexcitonemissionof4meVisattainablewithanappliedelectricfieldof0.7kV/cm.

简介：Theopticalparametersforthreesamplesofintrinsic,dopedSianddopedMg（AlxGa1-x)yIn1-yPpreparedbytheMOCVDonGaAssubstrateweremeasuredbyusingellipsometryandwerecalculatedbythetwo-layerabsorptionfilmmodel.Theresultsobtainedwerediscussed.Thegrownratesandthicknessofoxidiclayerontheintrinsic（AlxGa1-x)yIn1-yPsurfaceexposedintheatmospherewerestudied.Alineardependenceofoxidiclayerthicknessonthetimewasobtained.

简介：RamanscatteringspectroscopyisappliedtoinvestigatethephononmodesinGaxIn1-xP(x=0.52)and(AlxGa1-x)0.51In0.49P(x=0.29)alloys.Two-modebehaviorinGaxIn1-xPandthree-modebehaviorin(AlxGa1-x)0.51In0.49Pareobserved.InorderedGaxIn1-xP,weclearlydistinguishtheTO1(GaP-like)modeandthesplittingofLO1(GaP-like)andLO2(InP-like)modes,whichisbelievedtobetheresultofsuperlatticeeffectofordering,andtheLO1+LO2mode,whichisobservedforthefirsttime.Inadditiontotheb/aratio,it'sfoundthattherelativeintensityoftheFLAandtheLO1+LO2modesalsocorrespondstothedegreeoforder.TheTO1andthesplittingofLO1andLO2devotetogethertothereductionofthe'valleydepth'.In(AlxGa1-x)0.51In0.49P,thedoublingofFLAisobserved.DuetotheinfluenceofAlcomposition,theGaP-likeLOmodebecomesashoulderoftheInP-likeLOmode.TheunresolvedRamanspectraindicatetheexistenceoforderedstructurein(AlxGa1-x)0.51In0.49Palloys.

简介：WecreateaGaNphotocathodebasedongradedAlxGa1-xNbufferlayerstoovercometheinfluenceofbuffer-emissionlayerinterfaceonthephotoemissionoftransmission-modeGaNphotocathodes.Agateshapedspectralresponsewitha260-nmstartingwavelengthanda375-nmcut-offwavelengthisobtained.Averagequantumefficiencyis15%andshortwavelengthresponsesarealmostequivalenttolongwavelengthones.Thefittedinterfacerecombinationvelocityis5×104cm/s,withnegligiblemagnitude,provingthatthedesignofthegradedbufferlayersisefficientinobtaininggoodinterfacequalitybetweenthebufferandtheemissionlayer.

简介：由使用0.15mGaAspHEMT(pseudomorphic高度电子活动性晶体管)技术，毫米波浪力量放大器微波的一个图案整体的集成电路(MMIC)是presented.With电路结构上的小心的优化，这个二阶段的电源放大器从33GHz与1dB的变化完成15.5dB的模仿的获得到超过在浸透的30dBm的模仿的产量电源能与最大的电源从3WDC供应被拉的37GHz.A26%.Rigorous的增加的效率(PAE)电磁的s

简介：战略分析指出，手机市场仍然是GaAs器件工业的主要驱动力，2003年北美的公司是其主导者。

简介：有约束力的精力和浅施主杂质的空效果精力移动在拉紧的GaN/AlxGa1xN球形的有限潜力的量声明点(QD)基于有效集体近似用一个变化方法是计算的。有约束力的精力作为点尺寸和静水力学的压力的功能被计算。数字结果证明杂质州的有约束力的精力增加，达到最大的值，然后当QD半径为任何电场增加，减少。而且，有约束力的精力为点的任何尺寸与压力增加。为大点尺寸的杂质精力的空移动为小点尺寸比那大得多，并且它被电场的增加提高。我们有或没有紧张效果比较杂质状态的有约束力的精力，并且结果证明紧张效果更加提高杂质绑定精力，特别为小QD尺寸。我们也在我们的工作考虑绝缘的失配。

简介：关于全球半绝缘(SI)GaAs晶片市场“SIGaAs衬底市场：2003～2008”预测：该市场到2008年将增长54％。2002～2003年间的增长率为43％。日本和北美仍然是体晶片的主要生产者，2003年占整个市场的43％，该地区2003年SIGaAs晶片市场(外卖和自用)增加33％。亚太地区的市场增长最快，但主要以代工模式运营以便为GaAs半导体工业的发展打下基础。

简介：ThereolutioncharacteristicofGaAs/GaAlAstrransmissionphotocathodeisanimportantparameterinthirdgenerationintensifiers.ThemodulationtransferfunctionofGaAs/GaAlAstransmissionphotocathodeisderivedfromasimpletwo-dimensionaldiffusionequation.Thetheoreticalresolutioncharacteristicofa2μmthickGaAs/GaAlAstransmissionphotocathodeiscalculated.TherelationshipbetweenresolutionandparametersinGaAs/GaAlAstransmissionphotocathodeisdiscussed.AconclusionisshownthatonecandesigntheGaAs/GaAlAstransmissionphotocathodeformaximumquantumefficiency,sincethesacrificeintheresolutiondoesn'tlimitsystemperformances.

简介：

简介：InGaAsP/GaAsSCHSQWlaershavebeenpreparedbyLPMOCVD.Thedependenceofthresholdcurrentdensityoncavitylengthwasexplained.Laserdiodesarecharacterizedbytheoutputpowerof1W20W,thresholdcurrentdensity(Jth)of330A/cm^2to450A/cm^2andexternaldifferentialquantumefficiency(ηd)of35%to75%,andthesecharacteristicsareingoodagreementwiththedesignedrequirement.

简介：WhenweuseMOCVDtechnique,anexcellentCdTeepi-layerwasgrownonGaAssubstratesandtheCdTe/GaAshybridsubstratessuitableforgrowingHg1-xCdxTe（CMT）wereobtained.ThexvalueinCMTisbetween0.2and0.8.TheelectricalpropertiesofCMTdependuponthethicknessofCdTeepi-layers.TheCdTe/GaAsinterfacewasexaminedbybothscanningelectronmicroscope（SEM）andelectronaugerspectra（EAS）.TheinfluenceofdefectsobservedatinterfaceonelectricalandopticalpropertiesofCMTfihnswasdis-cussed.

简介：Weinvestigatethenonlinearresponseofterahertz(THz)metamaterialperfectabsorbersconsistingofelectricsplitringresonatorsonGaAsintegratedwithapolyimidespacerandgoldgroundplane.Theseperfectabsorbersonbulksemi-insulatingGaAsarecharacterizedusinghigh-fieldTHztime-domainspectroscopy.Theresonancefrequencyredshifts20GHzandtheabsorbanceisreducedby30%astheincidentpeakfieldisincreasedfrom30to300kV/cm.ThenonlinearresponsearisesfromTHzfielddriveninterbandtransitionsandintervalleyscatteringintheGaAs.ToeliminatetheFresnellossesfromtheGaAssubstrate,wedesignandfabricateaflexiblemetamaterialsaturableperfectabsorber.Theabilitytocreatenonlinearabsorbersenablesappealingapplicationssuchasopticallimitingandself-focusing.