学科分类
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500 个结果
  • 简介:精力层次,波浪功能和秒顺序非线性的危险性被基于寓言、非寓言的乐队使用一个不对称的模型在GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As不对称的量井(AQW)计算。当在更宽的井在狭窄的量井并且在更高的躺subband边分析现象时,non-parabolicity的影响不能被忽视。在两倍回声(医生)下面调节的数字结果表演,secondorder差别频率产生(DFG)和光校正(或)分别地,在AQW的产生危险性到达2.5019m/V和13.208m/V它比体积GaAs的那些大得多。而且,我们计算AQW的吸收系数并且发现二泵波长对应于最大的吸收,因此适当的泵横梁必须被选择产生兆兆赫(THz)由DFG的放射。

  • 标签: 非对称量子阱 THZ波 砷化铝镓 差频 计算结果 泵浦波长
  • 简介:Usingasimpletwo-parameterwavefunction,wecalculatevariationallythebindingenergyofpositivelyandnegativelychargedexcitonsinGaAs/AlxGa1-xAsquantumwellsforwellwidthsfrom10to300A.Weconsidertheeffectofeffectivemass,dielectricconstantmismatchinthetwomaterials,andthewholecorrelationamongtheparticles.Theresultsarediscussedandcomparedindetailwithpreviousexperimentalandtheoreticalresults,whichshowfairagreementwiththem.

  • 标签: 量子力学 带电激子 GAAS/ALXGA1-XAS 最子阱
  • 简介:改进了一种从头计算方法—共轭梯度方法,研究了超晶格GaAs/AlxGa1-xAs的电子结构.根据超晶格的基本方程,在固定电子密度n(z)下,求解了基本方程的本征值和本征函数,并由它们组成新的n(z),重复此过程直到得自洽解.另按超晶格基本方程的具体情况,对每个kz独立地应用了共轭梯度方法,此可大大节省与Gram-Schmit正交化有关的时间.计算了超晶格的两个最低子能带之间的能量差和Fermi能量,其模拟计算的结果与对应的实验数值一致

  • 标签: 电子结构 超晶格 从头计算 共轭梯度方法
  • 简介:Zinchasbeendiffusedinton-typeInxGa1-xAs,InPandGaAsinclosedam-poules,andtheexperimentaldataforInxGa1-xAsrarelyreportedpreviouslyhavebeenob-tained,TheoreticallythelinearrelationsipbetweenlogarithmicdiffusioncoefficientlnDandthecompositionxhasbeendemonstrated,whichisingoodagreementwiththeexperimentalresults.ThecalculateddiffusionjunctiondepthforInGaAsbasedonthediffusionmodelinwhichD^∝c^2isassumedalsoagreeswellwiththatoftheexperment,Finallytheoveralldiffusiontimeinamultiayerheterostructurewasapproximatedast=(∑√-ti)^2.

  • 标签: GAAS OEIC 集成光学 锌扩散 半导体器件
  • 简介:Anovelhorizontalpush-pullmulti-substrateepitaxyboatwiththreeseparatecellsisintroducedinthisarticle,withmulti-substrateLPEprocessingisfeasibleinhorizontalLPEfurnace.TheprocessesofLPEAlxGa1-xAs/GaAssolarcellsarestudiedandtheefficiencyofthesolarcellsachieved19.8%(AM0,25℃,120mW/cm^2).

  • 标签: 漏相外延 半导体材料 单晶体 太阳能电池
  • 简介:GaxIn1-xAs1-ySbyalloyshavebeengrownbyatmosphericpressureMOCVDonn-GaSb(Te-doped)substrate.Thesohdcompositionwasdeterminedbyusingelectronmicroprobe.ThealloysofGalnAsSbwithcompositioninmiscibilitygapweresuccessfullygrown.TheopticalpropertiesofGaxIn1-xAs1-ySbylaverswerecharacterizedbythephotoluminescenceandtheinfraredabsorption.Thespectralresponsesofp+-GaInAsSb/p-GaxIn1-xAs1-ySby/n-GaSbdetectorsshowedwavelengthcutoffat2.4μmanddetectivity-D*=5×108cmHz1/2/Watroomtemperature.

  • 标签: MOCVD GaxIn+(1-x)As1-ySby Photoluminescence INFRARED absorption INFRARED
  • 简介:Athree-dimensionalmodelofGaAs/A1GaAsquantumdoubleringsinthelateralstaticelectricfieldisinvestigatedtheoretically.Theeigenvalueproblemwiththeeffective-massapproximationissolvedbymeansofthefinite-elementmethod.Theenergylevelsandwavefunctionsofquantum-confinedelectronsandheavyholesareobtainedandshowanagreementwithourprevioustheoreticalandexperimentalstudies.ItisshownintheapproximationofneglectingtheCoulombattractionbetweentheelectronandheavyholethatarelativelylargeStarkshiftofexcitonemissionof4meVisattainablewithanappliedelectricfieldof0.7kV/cm.

  • 标签: 横向电场 量子结构 电子 有限元方法 特征值问题 量子波函数
  • 简介:Theopticalparametersforthreesamplesofintrinsic,dopedSianddopedMg(AlxGa1-x)yIn1-yPpreparedbytheMOCVDonGaAssubstrateweremeasuredbyusingellipsometryandwerecalculatedbythetwo-layerabsorptionfilmmodel.Theresultsobtainedwerediscussed.Thegrownratesandthicknessofoxidiclayerontheintrinsic(AlxGa1-x)yIn1-yPsurfaceexposedintheatmospherewerestudied.Alineardependenceofoxidiclayerthicknessonthetimewasobtained.

  • 标签: 椭圆光度法 光参数 氧化层 二层吸收薄膜 半导体 铝镓铟磷
  • 简介:RamanscatteringspectroscopyisappliedtoinvestigatethephononmodesinGaxIn1-xP(x=0.52)and(AlxGa1-x)0.51In0.49P(x=0.29)alloys.Two-modebehaviorinGaxIn1-xPandthree-modebehaviorin(AlxGa1-x)0.51In0.49Pareobserved.InorderedGaxIn1-xP,weclearlydistinguishtheTO1(GaP-like)modeandthesplittingofLO1(GaP-like)andLO2(InP-like)modes,whichisbelievedtobetheresultofsuperlatticeeffectofordering,andtheLO1+LO2mode,whichisobservedforthefirsttime.Inadditiontotheb/aratio,it'sfoundthattherelativeintensityoftheFLAandtheLO1+LO2modesalsocorrespondstothedegreeoforder.TheTO1andthesplittingofLO1andLO2devotetogethertothereductionofthe'valleydepth'.In(AlxGa1-x)0.51In0.49P,thedoublingofFLAisobserved.DuetotheinfluenceofAlcomposition,theGaP-likeLOmodebecomesashoulderoftheInP-likeLOmode.TheunresolvedRamanspectraindicatetheexistenceoforderedstructurein(AlxGa1-x)0.51In0.49Palloys.

  • 标签: SEMICONDUCTORS ORDER-DISORDER effects PHONONS LUMINESCENCE
  • 简介:WecreateaGaNphotocathodebasedongradedAlxGa1-xNbufferlayerstoovercometheinfluenceofbuffer-emissionlayerinterfaceonthephotoemissionoftransmission-modeGaNphotocathodes.Agateshapedspectralresponsewitha260-nmstartingwavelengthanda375-nmcut-offwavelengthisobtained.Averagequantumefficiencyis15%andshortwavelengthresponsesarealmostequivalenttolongwavelengthones.Thefittedinterfacerecombinationvelocityis5×104cm/s,withnegligiblemagnitude,provingthatthedesignofthegradedbufferlayersisefficientinobtaininggoodinterfacequalitybetweenthebufferandtheemissionlayer.

  • 标签: 光电阴极 缓冲层 GaN 传输模式 截止波长 光电发射
  • 简介:由使用0.15mGaAspHEMT(pseudomorphic高度电子活动性晶体管)技术,毫米波浪力量放大器微波的一个图案整体的集成电路(MMIC)是presented.With电路结构上的小心的优化,这个二阶段的电源放大器从33GHz与1dB的变化完成15.5dB的模仿的获得到超过在浸透的30dBm的模仿的产量电源能与最大的电源从3WDC供应被拉的37GHz.A26%.Rigorous的增加的效率(PAE)电磁的s

  • 标签: 集成电路设计 功率放大器 PHEMT GaAs GHZ MMIC
  • 简介:有约束力的精力和浅施主杂质的空效果精力移动在拉紧的GaN/AlxGa1xN球形的有限潜力的量声明点(QD)基于有效集体近似用一个变化方法是计算的。有约束力的精力作为点尺寸和静水力学的压力的功能被计算。数字结果证明杂质州的有约束力的精力增加,达到最大的值,然后当QD半径为任何电场增加,减少。而且,有约束力的精力为点的任何尺寸与压力增加。为大点尺寸的杂质精力的空移动为小点尺寸比那大得多,并且它被电场的增加提高。我们有或没有紧张效果比较杂质状态的有约束力的精力,并且结果证明紧张效果更加提高杂质绑定精力,特别为小QD尺寸。我们也在我们的工作考虑绝缘的失配。

  • 标签: 施主杂质态 静水压力 结合能 量子点 电场 球形
  • 简介:关于全球半绝缘(SI)GaAs晶片市场“SIGaAs衬底市场:2003~2008”预测:该市场到2008年将增长54%。2002~2003年间的增长率为43%。日本和北美仍然是体晶片的主要生产者,2003年占整个市场的43%,该地区2003年SIGaAs晶片市场(外卖和自用)增加33%。亚太地区的市场增长最快,但主要以代工模式运营以便为GaAs半导体工业的发展打下基础。

  • 标签: 市场增长 代工 增长率 半导体工业 亚太地区 北美
  • 简介:ThereolutioncharacteristicofGaAs/GaAlAstrransmissionphotocathodeisanimportantparameterinthirdgenerationintensifiers.ThemodulationtransferfunctionofGaAs/GaAlAstransmissionphotocathodeisderivedfromasimpletwo-dimensionaldiffusionequation.Thetheoreticalresolutioncharacteristicofa2μmthickGaAs/GaAlAstransmissionphotocathodeiscalculated.TherelationshipbetweenresolutionandparametersinGaAs/GaAlAstransmissionphotocathodeisdiscussed.AconclusionisshownthatonecandesigntheGaAs/GaAlAstransmissionphotocathodeformaximumquantumefficiency,sincethesacrificeintheresolutiondoesn'tlimitsystemperformances.

  • 标签: 镓砷/镓铝砷 材料 光阴极 定额量 第三代增强器
  • 简介:InGaAsP/GaAsSCHSQWlaershavebeenpreparedbyLPMOCVD.Thedependenceofthresholdcurrentdensityoncavitylengthwasexplained.Laserdiodesarecharacterizedbytheoutputpowerof1W20W,thresholdcurrentdensity(Jth)of330A/cm^2to450A/cm^2andexternaldifferentialquantumefficiency(ηd)of35%to75%,andthesecharacteristicsareingoodagreementwiththedesignedrequirement.

  • 标签: 量子阱 半导体激光器 GaAsP/GaAs 镓砷磷二元化合物
  • 简介:WhenweuseMOCVDtechnique,anexcellentCdTeepi-layerwasgrownonGaAssubstratesandtheCdTe/GaAshybridsubstratessuitableforgrowingHg1-xCdxTe(CMT)wereobtained.ThexvalueinCMTisbetween0.2and0.8.TheelectricalpropertiesofCMTdependuponthethicknessofCdTeepi-layers.TheCdTe/GaAsinterfacewasexaminedbybothscanningelectronmicroscope(SEM)andelectronaugerspectra(EAS).TheinfluenceofdefectsobservedatinterfaceonelectricalandopticalpropertiesofCMTfihnswasdis-cussed.

  • 标签: MOCVD HgCdTe/CdTe/GaAs structures CdTe/GaAs BUFFER LAYERS
  • 简介:Weinvestigatethenonlinearresponseofterahertz(THz)metamaterialperfectabsorbersconsistingofelectricsplitringresonatorsonGaAsintegratedwithapolyimidespacerandgoldgroundplane.Theseperfectabsorbersonbulksemi-insulatingGaAsarecharacterizedusinghigh-fieldTHztime-domainspectroscopy.Theresonancefrequencyredshifts20GHzandtheabsorbanceisreducedby30%astheincidentpeakfieldisincreasedfrom30to300kV/cm.ThenonlinearresponsearisesfromTHzfielddriveninterbandtransitionsandintervalleyscatteringintheGaAs.ToeliminatetheFresnellossesfromtheGaAssubstrate,wedesignandfabricateaflexiblemetamaterialsaturableperfectabsorber.Theabilitytocreatenonlinearabsorbersenablesappealingapplicationssuchasopticallimitingandself-focusing.

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