学科分类
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1 个结果
  • 简介:Higher-κdielectricLaLuO_3,depositedbymolecularbeamdeposition,withTiNasgatestackisintegratedintohigh-mobilitySi/SiGe/SOIquantum-wellp-typemetal-oxide-semiconductorfieldeffecttransistors.Thresholdvoltageshiftandcapacitanceequivalentthicknessshrinkareobserved,resultingfromoxygenscavengingeffectinLaLuO_3withTi-richTiNafterhightemperatureannealing.Themechanismofoxygenscavenginganditspotentialforresistivememoryapplicationsareanalyzedanddiscussed.

  • 标签: 金属氧化物 场效应晶体管 清除作用 高流动性 锗/硅 量子阱