简介:Vacuumtreatmentandion-beambombardmentaretwomajorprocessesinthelowenergyion-beamimplantation.Toaccuratelystudythecontributionsofthesetwomajorfactorstothebioeffectsseparately,theM_1generationvariationofArabidopsisthalianawithion-beamimplantationandvacuumtreatmentwerecomparedthroughaseriesofkeyplantdevelopmentparametersincludingmorphologicalobservation,biochemicalassayandRAPD(randomamplifiedpolymorphicDNA)analysis.Theresultsshowedthation-beamimplantationhadobviouseffectonalmostalloftheseparameters,andthevacuumtreatmenthadsomeimpactsonseveralmorphologicalparameterssuchastheboltingtimeandthelengthoftheprimarystem.Takingtheresultstogether,theindicationisthatvacuumtreatmenthassomeslightcontributionstothebioeffectsofion-beamimplantationwhileion-beambombardmentitselfisthemajorcreatorofthebioeffects.
简介:Anewrectangularpulsetriggergeneratorhasbeendevelopedwhichcangeneratetwo10kVpulseswitharisetimelessthan1ns,ajitterof0.2nsandawidthofabout10nsand40ns,respectively.Thisgeneratorusestwopolymer-foilswitchesand25ohmBlumleintransmissionlinescomposedoftwo-parallelstandardcoaxialcablesdischargingintotwo50ohmoutputcables.Thepulsewidthandthedelaybetweentwopulsescanbeadjustedbychangingthelengthofthecables.
简介:ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.
简介:本真空控制保护系统是为北京同步辐射装置(BSRF)上的3W1高功率(总功率为2.54W)扭摆磁铁(Wiggler)光束线(包括前端区、3W1A和3W1B)而设计和建造的。主要建造目的是,保护北京正负电子对撞机(BEPC)电子储存环的超高真空系统和其它光束线不要受到在某一条光束线上突然发生的灾难性真空事故的破坏,以及保护无水冷却和冷却水意外中断了的光束线部件不要被扭摆磁铁发射出来的高功率同步辐射所损坏。此外,在活动水冷挡光罩关闭之前,为了防止快速阀的阀板因过热而被损坏,在快速阀中使用了一种熔点温度为1680℃的钛合金阀板。为了给扭摆磁铁光束线提供一个可靠的真空控制保护系统,系统设计是以F1-60MR型可编程序控制器(PLC)为基础的,PLC负责管理系统的状态监测、真空联锁、控制、自动记录和故障报警等。本文叙述了系统的设计。
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简介:本文对合成制备的LiNiO2、LiCo2和LiNixCo1-xO2正极材料以及稀土金属Ce元素添加改性的正极材料进行了XRD和EXAFS表征。结果表明,随着焙烧温度的升高,物相组成趋于单一,晶格趋向完整,800℃时完全形成LiNiO2、LiCoO2晶相结合。LiNiCoO2样品中Ni/Co比不影响LiNiO2晶相的形成,而只影响其晶相组成;掺杂的稀土金属Ce元素以CeO2状态存在于产物中,CeO2对LiNiO2晶相形成有一定的影响;LiCoO2的焙烧温度不能大于900℃,否则Co被氧化为Co3O4;样品中Ni与Co原子的局域结构,除Ni与Co原子相互影响外,掺杂Ce后对它们的局域结构也有较大影响。