简介:In1929,AmericanastronomerHubblefirstdiscoveredthattherecessionalvelocityofagalaxyincreaseswithitsdistancefromtheearth,andthereforeputforwardHubble’slaw.ItisconsideredthefirstobservationalbasisfortheexpansionoftheuniverseandtodayservesasoneofthepiecesofevidencemostoftencitedinsupportoftheBigBangmodel.SincethentheastrophysicscommunityhasbelievedthattheuniverseisinaconstantrateofexpansionuntilSaulPermutter,BrianPaulSchmitandAdamGuyRieesdiscoveredtheacceleratingexpansionoftheuniversethroughobservationofseveraldozendistantsupernovasin1998,whothenwontheNobelPrizeinPhysics2011.Buthumanstillcannotcompletelyexplainthephenomenonthattheuniverseisexpandingatanever-acceleratingrate.Thustheauthorofthispaperstudiedtheoriginandevolutionofgalaxiesagain,andrevealedthestructureofgalaxyandprovedHubble’slaw,thenrevealedthetruthabouttheexpansionoftheuniverseaswellasdarkmatteranddarkenergy.
简介:ForEl-Nabulsi’sfractionalBirkhoffsystem,Meisymmetryperturbation,thecorrespondingMei-typeadiabaticinvariantsandNoether-typeadiabaticinvariantsareinvestigatedinthispaper.Firstly,basedonEl-NabulsiBirkhofffractionalequations,MeisymmetryandthecorrespondingMeiconservedquantity,NoetherconservedquantitydeducedindirectlybyMeisymmetryarestudied.Secondly,Mei-typeexactinvariantsandNoether-typeexactinvariantsaregivenonthebasisofthedefinitionofadiabaticinvatiant.Thirdly,Meisymmetryperturbation,Mei-typeadiabaticinvariantsandNoether-typeadiabaticinvariantsforthedisturbedEl-Nabulsi’sfractionalBirkhoffsystemarestudied.Finally,twoexamples,Hojman-UrrutiaproblemforMei-typeadiabaticinvariantsandanotherfortheNoether-typeadiabaticinvariants,aregiventoillustratetheapplicationoftheresults.
简介:Veryrecently,BelleannouncedtheirobservationofΥ(5S)!bJ!(J=0;1;2),indicatingthattheΥ(5S)!bJ!decaysalsohavelargedecaywidths,i.e.,themeasuredbranchratiosofΥ(5S)!bJ!are<3:410??3,(1:640:23+0:30??0:22)10??3,and(0:570:220:07)10??3withJ=0;1;2,respectively[1].ItshouldbenoticedthateventhoughthetreelevelcontributionstoΥ(5S)!bJ!(J=0;1;2)shouldbestronglysuppressedduetotheOkubo-Zweig-Iizuka(OZI)rule,suchlargedecaywidthsareobserved,whichagaininspiresourinterestinunderstandingsuchquantities.Inthiswork,weproposethatthecontributionfromthehadronicloopshouldbeconsideredinstudyingΥ(5S)!bJ!.
简介:在1935,迪拉克证实在de保姆空格而是两个精力动量操作员也不他们的保守法律的物理波浪方程被给。在它在在那里的de保姆组被证明那的这篇文章是对海森堡组和组们是的这的生成器同形的一个亚群组遵守一条保守法律的精力动量操作符。
简介:Wetrytoapplyaconstituentquarkmodel(avarietychiralconstituentquarkmodel)andtheresonatinggroupapproachforthemulti-quarkproblemstocomputetheeffectivepotentialbetweentheNN-inS-wave(thequarksinthenucleonsNandN-,andthetwonucleonsrelativelyaswell,areinSwave)soastoseethepossibilityiftheremaybeatightboundstateofsixquarksasindicatedbyastrongenhancementatthresholdofpp-inJ/ψandBdecays.TheeffectivepotentialwhichweobtainintermsofthemodelandapproachshowsiftheexperimentalenhancementisreallycausedbyatightS-waveboundstateofsixquarks,thenthequantumnumberoftheboundstateisverylikelytobeI=1,JPC=0-+.
简介:Recently,bismuthsulfide(Bi2S3)hasattractedmuchattentioninthethermoelectriccommunityowingtoitsabundance,lowcost,andadvancedproperties.However,itspoorelectricaltransportpropertieshavepreventedBi2S3devicesfromrealizinghighthermoelectricperformance.Inthiswork,ourmotivationistodecreasethelargeelectricalresistivity,whichisrecognizedastheoriginofthelowZTvalueinundopedBi2S3.Wecombinedmeltingandsparkplasmasintering(SPS)inacontinuousfabricationprocesstoproduceBi2S3–xSex(x=0,0.09,0.15,0.21)andBi2S2.85–ySe0.15Cly(y=0.0015,0.0045,0.0075,0.015,0.03)samples.OurresultsshowthatSealloyingatSsitescannarrowthebandgapandactivateintrinsicelectronconduction,leadingtoahighpowerfactorof~2.0μW·cm–1·K–2atroomtemperatureinBi2S2.85S0.15,about100timeshigherthanthatofundopedBi2S3.Moreover,ourfurtherintroductionofClatomsintotheSsitesresultedinasecond-stageoptimizationofcarrierconcentrationandsimultaneouslyreducedthelatticethermalconductivity,whichcontributedtoahighZTvalueof~0.6at723KforBi2S2.835Se0.15Cl0.015.OurresultsindicatethathighthermoelectricperformancecouldberealizedinBi2S3withearth-abundantandlow-costelements.
简介:Cu2ZnSnS4(CZTS)基于太阳能电池被microelectronic和photonic结构(AMPS-1D)的一个维的太阳能电池模拟软件分析数字地模仿。在模拟使用的设备结构是Al/ZnO:Al/nZn(O,S)/pCZTS/Mo。工作是在ZnO1xSx缓冲区层,它将产出更高的变换效率。由改变S/(S+O)比率x,在CZTS/Zn的传导乐队偏移量(CBO)(O,S)如果比率的完整的范围被考虑,接口能从0.23eV到1.06eV。当时,0.23eV的最佳的CBO能被完成ZnO1xSx缓冲区有S/(S+O)0.6的比率。太阳能电池效率首先与增加硫内容增加然后为x突然地减少>0.6,它由我们的建议的最佳的硫内容x=到达17.55%的最高的价值0.6。我们的结果在处理ZnO1x为高效率CZTS的Sx缓冲区层免职太阳能电池。
简介:我们学习配对的状态在一大部分在旋转起来和旋转下面费米子分别地被充满到s-和px-orbital乐队的地方,二部件的费密气体在一个各向异性的二维的光格子装载了的imbalanced。我们由于s和pxorbitals的乐队结构的相对倒置显示出那,在一样上在二费米子之间配对的系统帮助Brillouin地区站在一起,与有限center-of-mass动量为状态导致大稳定的政体,即,Fulde-Ferrell-Larkin-Ovchinnikov(FFLO)状态。特别地,二费密什么时候出现,在动量空间是靠近的,嵌套的效果与空间调整稳定-FFLO阶段的一种特殊类型沿着容易掘的x方向。我们在二维的飞机以内为各种各样的方面比率在吝啬地的途径以内畴划零温度的阶段图并且计算Berezinskii-Kosterlitz-Thouless(BKT)转变温度T为不同阶段的BKT。
简介:PlanarringresonatorwaveguidesarefabricatedinthinfilmsofAs2S3chalcogenideglass,depositedonsilicaon-siliconsubstrates.WaveguidecoresaredirectlywrittenbyscanningthefocusedilluminationofafemtosecondTi:sapphirelaseratacentralwavelengthof810nm,throughatwo-photonphoto-darkeningprocess.Alargephotoinducedindexchangeof0.3–0.4refractiveindexunitsisobtained.Theradiusoftheringresonatoris1.9mm,correspondingtoatransmissionfreespectralrangeof9.1GHz.Ahighloaded(intrinsic)Qvalueof110,000(180,000)isachieved.Thethermaldependenceoftheresonatortransferfunctionischaracterized.Theresultsprovidethefirstreport,tothebestofourknowledge,ofdirectlywrittenhigh-Qringresonatorsinchalcogenideglassfilms,anddemonstratethepotentialofthissimpletechniquetowardsthefabricationofplanarlightguidecircuitsinthesematerials.
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简介:Inthisstudy,weevaluatethevaluesoflatticethermalconductivityκLoftypeIIGeclathrate(Ge34)anddiamondphaseGecrystal(d-Ge)withtheequilibriummoleculardynamics(EMD)methodandtheSlack'sequation.ThekeyparametersoftheSlack'sequationarederivedfromthethermodynamicpropertiesobtainedfromthelatticedynamics(LD)calculations.TheempiricalTersoff'spotentialisusedinbothEMDandLDsimulations.Thethermalconductivitiesofd-Gecalculatedbybothmethodsareinaccordancewiththeexperimentalvalues.ThepredictionsoftheSlack'sequationareconsistentwiththeEMDresultsabove250KforbothGe34andd-Ge.Inatemperaturerangeof200-1000K,theκLvalueofd-GeisaboutseveraltimeslargerthanthatofGe34.
简介:Thispublisher’snotereportscorrectionstothreeofthefiguresin[Photon.Res.4,49(2016)].