简介：Amodellingstudyisperformedtocomparetheplasmaflowandheattransfercharacteristicsoflow-powerarc-heatedthrusters(arcjets)forthreedifferentpropellants:hydrogen,nitrogenandargon.Theall-speedSIMPLEalgorithmisemployedtosolvethegoverningequations,whichtakeintoaccounttheeffectsofcompressibility,LorentzforceandJouleheating,aswellasthetemperature-andpressure-dependenceofthegasproperties.Thetemperature,velocityandMachnumberdistributionscalculatedwithinthethrusternozzleobtainedwithdifferentpropellantgasesarecomparedforthesamethrusterstructure,dimensions,inlet-gasstagnantpressureandarccurrents.Thetemperaturedistributionsinthesolidregionoftheanode-nozzlewallarealsogiven.Itisfoundthattheflowandenergyconversionprocessesinthethrusternozzleshowmanysimilarfeaturesforallthreepropellants.Forexample,thepropellantisheatedmainlyinthenear-cathodeandconstrictorregion,withthehighestplasmatemperatureappearingnearthecathodetip;theflowtransitionfromthesubsonictosupersonicregimeoccurswithintheconstrictorregion;thehighestaxialvelocityappearsinsidethenozzle;andmostoftheinputpropellantflowstowardsthethrusterexitthroughthecoolergasregionneartheanode-nozzlewall.However,sincethepropertiesofhydrogen,nitrogenandargon,especiallytheirmolecularweights,specificenthalpiesandthermalconductivities,aredifferent,thereareappreciabledifferencesinarcjetperformance.Forexample,comparedtotheothertwopropellants,thehydrogenarcjetthrustershowsahigherplasmatemperatureinthearcregion,andhigheraxialvelocitybutlowertemperatureatthethrusterexit.Correspondingly,thehydrogenarcjetthrusterhasthehighestspecificimpulseandarcvoltageforthesameinletstagnantpressureandarccurrent.Thepredictionsofthemodellingarecomparedfavourablywithavailableexperimentalresults.

简介：ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.