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简介：TheembeddedboundarymethodforsolvingellipticandparabolicproblemsingeometricallycomplexdomainsusingCartesianmeshesbyJohansenandColella(1998,J.Comput.Phys.147,60)hasbeenextendedforellipticandparabolicproblemswithinteriorboundariesorinterfacesofdiscontinuitiesofmaterialpropertiesorsolutions.Secondorderaccuracyisachievedinspaceandtimeforbothstationaryandmovinginterfaceproblems.Themethodisconservativeforellipticandparabolicproblemswithfixedinterfaces.Basedonthismethod,afronttrackingalgorithmfortheStefanproblemhasbeendeveloped.Theaccuracyofthemethodismeasuredthroughcomparisonwithexactsolutiontoatwo-dimensionalStefanproblem.Thealgorithmhasbeenusedforthestudyofmeltingandsolidificationproblems.

简介：Aseriesof3wt%Ruembeddedonorderedmesoporouscarbon(OMC)catalystswithdifferentporesizeswerepreparedbyautoreductionbetweenrutheniumprecursorsandcarbonsourcesat1123K.RunanoparticleswereembeddedonthecarbonwallsofOMC.CharacterizationtechnologiesincludingpowerX-raydiffraction(XRD),nitrogenadsorption-desorption,transmissionelectronmicroscopy(TEM),andhydrogentemperature-programmedreduction(H2-TPR)wereusedtoscrutinizethecatalysts.ThecatalystactivityforFischer-Tropschsynthesis(FTS)wasmeasuredinafixedbedreactor.Itwasrevealedthat3wt%Ru-OMCcatalystsexhibitedhighlyorderedmesoporousstructureandlargesurfacearea.Comparedwiththecatalystswithsmallerpores,thecatalystswithlargerporeswereinclinedtoformlargerRuparticles.These3wt%Ru-OMCcatalystswithdifferentporesizesweremorestablethan3wt%Ru/ACcatalystduringtheFTSreactionsbecauseRuparticleswereembeddedonthecarbonwalls,suppressingparticlesaggregation,movementandoxidation.ThecatalyticactivityandC5+selectivitywerefoundtoincreasewiththeincreasingporesize,however,CH4selectivityshowedtheoppositetrend.ThesechangesmaybeexplainedintermsofthespecialenvironmentoftheactiveRusitesandthediffusionofproductsintheporesofthecatalysts,suggestingthattheactivityandhydrocarbonselectivityaremoredependentontheporesizeofOMCthanontheRuparticlesize.

简介：Anumericalstudyofanon-Darcymixedconvectiveheatandmasstransferflowoveraverticalsurfaceembeddedinaporousmediumundertheefectsofdoubledispersion,melting,andthermalradiationisinvestigated.Thesetofgoverningboundarylayerequationsandtheboundaryconditionsistransformedintoasetofcouplednonlinearordinarydiferentialequationswiththerelevantboundaryconditions.ThetransformedequationsaresolvednumericallybyusingtheChebyshevpseudospectralmethod.Comparisonsofthepresentresultswiththeexistingresultsintheliteraturearemade,andgoodagreementisfound.Numericalresultsforthevelocity,temperature,concentrationprofiles,andlocalNusseltandSherwoodnumbersarediscussedforvariousvaluesofphysicalparameters.

简介：2.2嵌入式Linux系统内核的配置与移植,2嵌入式Linux系统的移植和开发,首先在编译Linux内核时需要配置kernel使它支持如下PPP选项

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简介：Theinfluenceofinitialstrainstateonthedynamicresponseofanendbearingpileembeddedinisotropicsaturatedsoilisinvestigatedthroughthelinearizedtheoryofsmallelasticperturbationsuperposedonlargelystressedbodies.Thegoverningequationsforsoil,basedonBiot’sporoelasticitytheory,arederivedinthecylindricalcoordinates,andthepileismodeledbyusingtheone-dimensionalelastictheory.Theanalyticalsolutionsofpileimpedance,frequencyresponseofbothtwistangleandtimehistoryofvelocityresponseareobtainedbyusingofseparationofvariablestechnique.Finally,aparametricstudyoftheinfluenceofinitialstrainsonthetorsionalimpedance,twistangle,andvelocityresponseatthetopofthepileiscarriedout.

简介：现代化的港口城市横滨往往给人的印象是数万吨的货轮与远洋运输。然而在这个深秋时节，亚洲第一大港的横滨举行了一个影响力震撼IT领域的大会——EmbeddedTechnology2007，多达400家嵌入式系统软硬件提供商参加了这次盛会。会展厂商除了展出包括传统的视频、音频识别类的产品外，还包括大量的触摸屏技术以及工业控制系统。值得一提的是，一些半导体厂商展出了专门针对图形化计算的设备（如GPU等），让我们看到未来嵌入式领域的趋势。

简介：Si-richsiliconnitridefilmsarepreparedbyplasma-enhancedchemicalvapordepositionmethod,followedbythermalannealingtoformtheSinanocrystals(Si-NCs)embeddedinSiNxfloatinggateMOSstructures.Thecapacitance–voltage(C–V),current–voltage(I–V),andadmittance–voltage(G–V)measurementsareusedtoinvestigatethechargingcharacteristics.Itisfoundthatthemaximumflatbandvoltageshift(△VFB)duetofullchargedholes(～6.2V)ismuchlargerthanthatduetofullchargedelectrons(～1V).ThechargingdisplacementcurrentpeaksofelectronsandholescanbealsoobservedbytheI–Vmeasurements,respectively.FromtheG–VmeasurementswefindthattheholeinjectionisinfluencedbytheoxideholetrapswhicharelocatedneartheSiO2/Si-substrateinterface.CombiningtheresultsofC–VandG–Vmeasurements,wefindthattheholechargingoftheSi-NCsoccursviaatwo-steptunnelingmechanism.TheevolutionofG–VpeakoriginatedfromoxidetrapsexhibitstheprocessofholeinjectionintothesedefectsandtransferringtotheSi-NCs.