简介:ThepatternofITOtransparentelectrodeofpixelcellsinTFTAMLCDisacriticalstepinthemanufacturingprocessofflatpaneldisplaydevices,thedevelopmentofsuitableplasmareactiveionetchingisnecessarytoachievehighresolutiondisplay.InthisworkweinvestigatedtheAr/CF4plasmaetchingofITOasfunctionofdifferentparameters.WedemonstratedtheabilityofthisplasmatoetchITOandachievedanetchingrateofabout3.73nm/min,whichisexpectedtoincreaseforlongpumpingdownperiod,andalsothroughadditionofhydrogenintheplasma.FurthermorewedescribedtheITOetchingmechanisminAr/CF4plasma.Theinvestigationofselectivityshowedtobeverylowoversiliconnitrideandsilicondioxidebutveryhighoveraluminum.