摘要
Theinvertedbottom-emittingorganiclight-emittingdevices（IBOLEDs）wereprepared,withthestructureofITO/A1（xnm）/LiF（1nm）/Bphen（40nm）/CBP：Girl（14%）：R-4b（2%）（10nm）/BCP（3nm）/CBP：Glrl（14%）：R-4b（2%）（20nm）/TCTA（10nm）/NPB（40nm）/MoO3（40nm）/A1（100rim）,wherethethicknessofelectroninjectionlayerA1（x）are0nm,2nm,3nm,4nmand5nm,respectively.Inthispaper,theelectroninjectionconditionandluminancepropertiesofinverteddeviceswereinvestigatedbychangingthethicknessofA1layerinAFLiFcompoundthinfilm.ItturnsoutthattheintroductionofA1layercanimproveelectroninjectionofthedevicesdramatically.Furthermore,thedeviceexertslowerdrivingvoltageandhighercurrentefficiencywhenthethicknessofelectroninjectionA1layeris3nm.Forexample,thecurrentefficiencyofthedevicewith3-urn-thickA1layerreaches19.75cd·A^-1whendrivingvoltageis7V,whichis1.24,1.17and17.03timeslargerthanthoseofthedeviceswith2nm,4nmand5nmA1layer,respectively.Thedevicepropertyreachesuptothelevelofcorrespondingconventionaldevice.Inaddition,allin-verteddeviceswithelectroninjectionA1layershowsuperiorstabilityofcolorcoordinateduetotheadoptionofco-evaporationemittinglayerandBCPspacer-layer,andthecolorcoordinateoftheinverteddevicewith3-nm-thickAIlayeronlychangesfrom（0.5806,0.4056）to（0.5328,0.4363）whendrivingvoltageincreasesfrom6Vto10V.
出版日期
2018年03月13日（中国期刊网平台首次上网日期，不代表论文的发表时间）
