Anewmethodforfabricatingorderedporoussiliconisreported.Atwo-dimensionalsilicananospherearrayisusedasatemplatewithahydrofluoricacid-hydrogenperoxidesolutionforetchingthenanospheres.Theinitialdiameteranddistributionoftheholesintheresultingporoussiliconlayeraredeterminedbythesizeanddistributionofthesilicananospheres.Thecorrosiontimecanbeusedtocontrolthedepthsoftheholes.ItisfoundthatthepresenceofaSiO_2layer,formedbytheoxidationoftheroughinternalsurfaceofthehole,istheprimaryreasonallowingthecorrosiontoproceed.Ultravioletreflectionandthermalconductivitymeasurementsshowthatthediameteranddistributionoftheholeshaveagreatinfluenceonpropertiesoftheporoussilicon.