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Band Structure and Optical Gain of InGaAs/GaAsBi Type-Ⅱ Quantum Wells Modeled by the k·p Model
Band Structure and Optical Gain of InGaAs/GaAsBi Type-Ⅱ Quantum Wells Modeled by the k·p Model
(整期优先)网络出版时间:2018-05-15
作者:
王畅;潘文武;Konstantin Kolokolov;王庶民
理学
>物理
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中国物理快报:英文版
2018年5期
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Band Structure and Optical Gain of InGaAs/GaAsBi Type-Ⅱ Quantum Wells Modeled by the k·p Model
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