Electrical nonlinearity in silicon modulators based on reversed PN junctions

(整期优先)网络出版时间:2017-02-12
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TheelectricalnonlinearityofsiliconmodulatorsbasedonreversedPNjunctionswasfoundtoseverelylimitthelinearityofthemodulators.Thiseffect,however,wasinadvertentlyneglectedinpreviousstudies.Consideringtheelectricalnonlinearityinsimulation,a32.2dBdegradationintheCDR3(i.e.,thesuppressionratiobetweenthefundamentalsignalandintermodulationdistortion)ofthemodulatorwasobservedatamodulationspeedof12GHz,andthespuriousfreedynamicrangewassimultaneouslydegradedby17.4dB.ItwasalsofoundthatthelinearityofthesiliconmodulatorcouldbeimprovedbyreducingtheseriesresistanceofthePNjunction.Thefrequencydependenceofthelinearityduetotheelectricalnonlinearitywasalsoinvestigated.