Low-noise 1.3μm InAs/GaAs quantum dot laser monolithically grown on silicon

(整期优先)网络出版时间:2018-11-21
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Wereportlow-noise,high-performancesingletransversemode1.3μmInAs/GaAsquantumdotlasersmonolithicallygrownonsilicon(Si)usingmolecularbeamepitaxy.Thefabricatednarrow-ridge-waveguideFabry–Perot(FP)lasershaveachievedaroom-temperaturecontinuous-wave(CW)thresholdcurrentof12.5mAandhighCWtemperaturetoleranceupto90°C.Anultra-lowrelativeintensitynoiseoflessthan-150dB∕Hzismeasuredinthe4–16GHzrange.Usingthislow-noiseSi-basedlaser,wethendemonstrate25.6Gb/sdatatransmissionover13.5kmSMF-28.Theselow-costFPlaserdevicesarepromisingcandidatestoprovidecost-effectivesolutionsforuseinuncooledSiphotonicstransmittersininter/hyperdatacentersandmetropolitandatalinks.