简介:ThesplittingofpotentialenergylevelsforgroundstateX2ΠgofOx2(x=+1,1)underspin–orbitcoupling(SOC)hasbeencalculatedbyusingthespin–orbit(SO)multi-configurationquasi-degenerateperturbationtheory(SO-MCQDPT).TheirMurrell–Sorbie(M–S)potentialfunctionsaregained,andthenthespectroscopicconstantsforelectronicstates2Π1/2and2Π3/2arederivedfromtheM–Sfunction.TheverticalexcitationenergiesforOx2(x=+1,1)areν[O+12(2Π3/2→X2Π1/2)]=195.652cm1,andν[O12(2Π1/2→X2Π3/2)]=182.568cm1,respectively.Allthespectroscopicdataforelectronicstates2Π1/2and2Π3/2aregivenforthefirsttime.
简介:测量了ZnO-TiO2-Bi2O3-CuO-Co2O3,ZnO-TiO2-Bi2O3-CuO-Cr2O3,ZnO-TiO2-Bi2O3-CuO-MnO2和ZnOTiO2-Bi2O3-CuO-MnO2-Co2O3-Cr2O3压敏陶瓷的正电子寿命谱及其电性能参数。研究了MnO2、Co2O3和Cr2O3掺杂对ZnO-TiO2-Bi2O3-CuO压敏陶瓷电子密度和电性能的影响。实验发现:ZnO-TiO2-Bi2O3-CuOCr2O3压敏陶瓷基体和晶界缺陷态的电子密度均最高,其压敏电压最低;ZnO-TiO2-Bi2O3-CuO-MnO2压敏陶瓷晶界缺陷态的电子密度最低,其压敏电压比前者高;ZnO-TiO2-Bi2O3-CuO-Co2O3压敏陶瓷基体(晶粒内)的电子密度最低,其压敏电压较高;而ZnO-TiO2-Bi2O3-CuO-MnO2-Co2O3-Cr2O3压敏陶瓷基体和晶界缺陷态的电子密度均较低,其压敏电压VT和非线性系数ɑ最高,漏电流IL最小。
简介:AnewlayeredCu-basedoxychalcogenideBa3Fe2O5Cu2S2hasbeensynthesizedanditsmagneticandelectronicpropertieswererevealed.Ba3Fe2O5Cu2S2isbuiltupbyalternativelystacking[Cu2S2]2-layersandironperovskiteoxide[(FeO2)(BaO)(FeO2)]2-layersalongthecaxisthatareseparatedbybariumionswithFe3+fivefoldcoordinatedbyasquare-pyramidalarrangementofoxygen.Fromthebondvalencearguments,weinferredthatinlayeredCuCh-based(Ch=S,Se,Te)compoundsthe+3cationinperovskiteoxidesheetprefersasquarepyramidalsite,whilethelowervalencecationprefersthesquareplanarsites.Thestudiesonsusceptibility,transport,andopticalreflectivityindicatethatBa3Fe2O5Cu2S2isanantiferromagneticsemiconductorwithaNe′eltemperatureof121Kandanopticalbandgapof1.03eV.Themeasurementofheatcapacityfrom10Ktoroomtemperatureshowsnoanomalyat121K.TheDebyetemperatureisdeterminedtobe113K.TheoreticalcalculationsindicatethattheconductionbandminimumispredominantlycontributedbyO2pand3dstatesofFeionsthatantiferromagneticallyarrangedinFeO2layers.TheFe3dstatesarelocatedatlowerenergyandresultinanarrowbandgapincomparisonwiththatoftheisostructuralSr3Sc2O5Cu2S2.
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简介:基于第一性原理,计算了MgSiP2的能带结构,结果显示压强减小了能带带隙值,部分电子有效质量随着压强增大而减小。费米能级附近电子态密度计算结果显示:随着压强的增大,价带顶电子态密度的斜率逐渐减小,而导带底电子态密度的斜率逐渐增加。结合半经典玻耳兹曼理论,分别计算了p型和《型MgSiP2的电导率与弛豫时间的比值、赛贝克系数以及功率因子与弛豫时间的比值。结果发现:压强所致部分电子有效质量的减小,提高了p型和.型MgSiP2的电导率,但在一定程度上降低了MgSiP2的赛贝克系数。在压强作用下,相对于n型MgSiP2,,型MgSiP2的电导率增加幅度更大,补偿了压强所致乡型MgSiP2赛贝克系数的降低,提高了型MgSiP2的功率因子,使其大于n型MgSiP2的对应值。计算结果表明,通过增大压强可以提高p型MgSiP2的热电性能,为实验制备具有良好热电性能MgSiP2提供了指导方案。
简介:Inthisarticle,theSm-dopingsinglecrystalsCa1-xSmxFe2As2(x=00.2)werepreparedbytheCaAsfluxmethod,andfollowedbyarapidquenchingtreatmentafterthehightemperaturegrowth.Thesampleswerecharacterizedbystructural,resistive,andmagneticmeasurements.ThesuccessfulSm-substitutionwasrevealedbythereductionofthelatticeparameterc,duetothesmallerionicradiusofSm3+thanCa2+.SuperconductivitywasobservedinallsampleswithonsetTcvaryingfrom27Kto44KuponSm-doping.ThecoexistenceofacollapsedphasetransitionandthesuperconductingtransitionwasfoundforthelowerSm-dopingsamples.ZeroresistivityandsubstantialsuperconductingvolumefractiononlyhappeninhigherSm-dopingcrystalswiththenominalx>0.10.Thedopingdependencesofthec-axislengthandonsetTcweresummarized.Thehigh-TcobservedinthesequenchedcrystalsmaybeattributedtosimultaneoustuningofelectroncarriersdopingandstraineffectcausedbylatticereductionofSm-substitution.
简介:Theground-stateandthermodynamicpropertiesofquantummixed-spinchainsof1/2-1/2-1-1and3/2-3/2-1-1areinvestigatedbyaquantumMonteCarlosimulationwiththeloop-clusteralgorithm.For1/2-1/2-1-1chain,wefindithastwophasesseparatedbyanenergy-gapvanishingpointintheground-state.For3/2-3/2-1-1chain,thenumericalresultsshowtwoenergy-gapvanishingpointsisolatedbydifferentphasesinitsground-state.Ourcalculationsindicatethatallthesegroundstatephasescanbeunderstoodbymeansofvalence-bond-solidpicture,andthethermodynamicbehavioratfinitetemperaturesiscontinuousasafunctionofparameterα=J2/J1.
简介:Thedipole-length,velocityandaecelerationabsorptionoscillatorstrengthsforthe1s^22p-ls^2nd(3_
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