简介:Theeffectofλ/2SiO2overcoatonthelaserdamagecharacteristicsofHfO2/SiO2high-reflector(HR)coatingsisinvestigatedwith1-on-1andN-on-1laserdamagetestmethods.Thelaserdamagesurfaceof1-on-1isanalyzedbyastepanalyzer.ThesurfacemorphologiesshowthatlaserdamagemakesthecoatingdamagedareaprotrudentandroughforHRcoatingwithoutλ/2silicaovercoat,butconcaveandsmoothforHRcoatingwithλ/2silicaovercoat.Theresultof10-on-1multi-pulseirradiationonthesamepointofthecoatingshowsthatthereisanenergydensitystageonthedamagecurve.Ifthelaserenergydensityiswithintherangeofthestage,HfO2/SiO2HRcoatingswithλ/2silicaovercoatwillnotbedamagedmorethan2timesformulti-shots,andthesurfacedamagesareveryslightsothatthereisnoimpactonthecoatingperformance.Anotherinterestingresultisthattheenergydensitystageextendsfromthedamagethresholdtothepointofabout3timesofthreshold,whichissimilartotheeffectofthelaserconditiononcoating.
简介:Thecombinationofdeepwetetchingandamagneto-rheologicalfinishing(MRF)processisinvestigatedtosimultaneouslyimprovelaserdamageresistanceofafused-silicasurfaceat355nm.ThesubsequentlydepositedSiO2coatingsareresearchedtoclarifytheimpactofsubstratefinishingtechnologyonthecoatings.Itisrevealedthatadeepremovalproceedingfromthesinglesideordoublesidehadasignificantimpactonthelaser-induceddamagethreshold(LIDT)ofthefusedsilica,especiallyfortherearsurface.Afterthedeepetching,theMRFprocessthatfolloweddoesnotactuallyincreasetheLIDT,butitdoesamelioratethesurfacequalitieswithoutadditionalLIDTdegradation.Thecombinationguaranteeboththeintegrityofthesurface’sfinishandthelaserdamageresistanceofthefusedsilicaandsubsequentSiO2coatings.
简介:TheCa_2SiO_4:Dy~(3+)phosphorwassynthesizedbythehightemperaturesolid-statereactionmethodinair.TheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorshowsseveralbandsat486,575,and665nmunderthe365-nmexcitation.TheeffectsofLi~+,Na~+,andK~+ontheemissionspectrumofCa_2SiO_4:Dy~(3+)phosphorwerestudied,TheresultsshowthattheemissionspectrumintensityisgreatlyinfluencedbyLi~+,Na~+,andK~+.Thechargecompensationconcentrationcorrespondingtothemaximumemissionintensityisdifferentwithdifferentchargecompensations.
简介:Anultra-broadbandandfabrication-tolerantsiliconpolarizationrotatorsplitterisproposedinthisLetter.Benefittingfromthebroadbandandlow-losscharacteristicsofthebi-leveltaperandcounter-taperedcoupler,thedesigneddevicehasasimulatedinsertionlossandcrosstalkoflessthan0.2and-15dBinthewavebandfrom1290to1610nm.Thesecharacteristicsmakeitvaluableinapplicationswithlargebandwidthrequirements,suchasfull-gridCoarsewavelengthdivisionmultiplexer(CWDM)anddiplexer/triplexerfiber-to-the-homesystems.Thefabricationtoleranceofthedesignisalsoanalyzed,showingthatthedeviceperformanceisquitestablewithnormalmanufacturingerrorsinsiliconphotonicsfoundries.
简介:AseriesofAlx-(Alq3)1-xgranularfilmsispreparedonSiwaferwithnativeoxidelayerusingco-evaporationtechnique.Largelateralphotovoltaiceffect(LPE)isobserved,withanoptimalLPVsensitivityof75mV/mminx=0.35sample.ThedependenceofLPEontemperatureandAlcompositionisinvestigated,andthepossiblemechanismisdiscussed.
简介:SiO_2thinfilmscontainingSi_(1-x)Ge_xquantumdots(QDs)arepreparedbyionimplantationandannealingtreatment.Thephotoluminescence(PL)andmicrostructuralpropertiesofthinfilmsareinvestigated.ThesamplesexhibitstrongPLinthewavelengthrangeof400—470nmandrelativelyweakPLpeaksat730and780nmatroomtemperature.Blueshiftisfoundforthe400-nmPLpeak,andtheintensityincreasesinitiallyandthendecreaseswiththeincreaseofGe-dopingdose.Weproposethatthe400—470nmPLbandoriginatesfrommultipleluminescencecenters,andthe730-and780-nmPLpeaksareascribedtotheSi=OandGeOluminescencecenters.
简介:Wereportthefabricationofsubmicrometerpitsarray(SP-array)on6H-SiCsurfacebytheinterferenceoftwofemtosecondlaserbeams.FormationmechanismsandopticalabsorptionofSP-arrayarestudied.Therelativereflectivityandtransmissivityofwhitelightdecreaseto10%ofthevaluesofSiCcrystal,andtheopticalabsorptionisenhancedto97%.Therelativereflectivityandtransmissivityofincidentangleswithintherangeof20°-60°arekeptbelow25%.TheenhancementmechanismofopticalabsorptionoftheSP-arrayisalsodiscussed.
简介:Thenonlinearswitchingcharacteristicsoffusedfiberdirectionalcouplerswerestudiedexperimentally.Byusingfemtosecondlaserpulseswithpulsewidthof100fsandwavelengthofabout1550nmfromasystemofTi:sapphirelaserandopticalparametricamplifier(OPA),thenonlinearswitchingpropertiesofanullcoupleranda100%couplerweremeasured.Theexperimentalresultswerecoincidentwiththesimulationsbasedonnonlinearpropagationequationsinfiberbyusingsuper-modetheory.Nonlinearlossinfiberwasalsomeasuredtogettheinjectedpoweratthecoupler.Afterdeductingthenonlinearlossandinputefficiency,thenonlinearswitchingcriticalpeakpowersfora100%andanullfusedcouplerswerecalculatedtobe9410and9440W,respectively.ThenonlinearlossparameterPNinanexpressionofαNL=αP/PNwasobtainedtobePN=0.23W.
简介:Thepotentialenergycurves(PECs)ofBOmolecule,includingΣ+andΠsymmetrieswithdoubletspinmultiplicities,areobtainedemployingmulti-referenceconfigurationinteraction(MRCI)methodandDunning'scorrelationconsistentbasissets.Theanalyticalpotentialenergyfunctions(APEFs)arefittedusingtheMurrell-Sorbie(MS)functionandtheleastsquaremethod.BasedonthePECs,thespectroscopicconstantsofthestateshavebeendeterminedandcomparedwiththetheoreticalandexperimentalresultsavailabletoaffirmtheaccuracyandliabilityofthecalculations.Theroot-mean-square(RMS)errorsbetweenthefittedresultsandtheabinitiovaluesaretoolittleincomparisonwiththechemicalaccuracy(349.755cm-1).ItisshownthatthepresentAPEFsareaccurateandcandisplaytheinteractionbetweentheatomswell.ThepresentAPEFscanbeusedtoconstructmorecomplicatedAPEFordosomedynamicinvestigations.
简介:Usingamicrowavegenerator,chlorinedilutedbyheliumwasdissociatedtochlorineatomsthatsubse-quentlyreactedwithhydrogenazidetoproducetheexcitedstatesofNCl(a1△).Meanwhile,moleculariodinewithcarriergasofheliumreactedwithatomicchlorinetoproduceatomiciodinewhichthenwaspumpedtoexcitedstateofI(2P1/2)byanenergytransferreactionfromNCl(a1△).Inthispaper,thechangesofNCl(a1△)andNCl(bi∑)emissionintensityispresentedwhenI2/HeisintroducedintothestreamofCl/Cl2/He/HN3/NCl(a1△)/NCl(b1∑).ThedependencesofatomiciodineI(2P1/2)onflowratesofgaseswerealsoinvestigated.TheoptimumparametersforI(2P1/2)productionaregiven.
简介:Adiode-end-pumpedelectro-optic(EO)Q-switchedNd:YVO4laseroperatingatrepetitionrateof10kpps(pulsespersecond)wasreported.AblockofLa3Ga5SiO14(LGS)singlecrystalwasusedasaQ-switchandthedriverwasametaloxidesemiconductorfieldeffecttransistor(MOS-FET)pulserofhighrepetitionrateandhighvoltage.Atcontinuouswave(CW)operation,theslopeefficiencyofthelaserwas46%,andmaximumoptical-to-opticalefficiencywas38.5%.Usinganoutputcouplerwithtransmissionof70%,a10-kppsQ-switchedpulsetrainwith0.4-mJmonopulseenergyand8.2-nspulsewidthwasachieved,theopticalconversionefficiencywasaround15%,andthebeamqualityM2factorwaslessthan1.2.
简介:FourkindsofY2O3stabilizedZrO2(YSZ)thinfilmswithdifferentY2O3contents(from0to12mol%)aredepositedonBK7glasssubstratesbyelectron-beamevaporationmethod.TheeffectsofdifferentY2O3dopantcontentsonresidualstress,structure,andopticalpropertiesofZrO2thinfilmsareinvestigated.TheresultsshowthatresidualstressinYSZthinfilmsvariesfromtensiletocompressivewiththeincreaseofY2O3molarcontent.TheadditionofY2O3isbeneficialtothecrystallizationofYSZthinfilmandtransformationfromamorphoustohightemperaturephase,andtherefractiveindexdecreaseswiththeincreaseofY2O3molarcontent.Moreover,thevariationsofresidualstressandtheshiftsofrefractiveindexcorrespondtotheevolutionofstructuresinducedbytheadditionofY2O3.
简介:Ag-MgF2cermetfilmswithdifferentAgfractionswerepreparedbyvacuumevaporation.Themicrostruc-tureofthefilmswasexaminedbyRamanscatteringtechnique.Thesurface-enhancedRamanspectrumforMgF2moleculesinthecermetfilmstronglysuggeststheexistenceofAgnanoparticlesdispersedinMgF2matrix.TheintensitiesoftheRamanspectraofAg-MgF2cermetfilmsincreasewithAgfraction.TheenhancementofRamanscatteringdisappearswhenAgcontentreacheswt.20%.TheanalyseswiththetransmissionelectronmicroscopyshowedthatAg-MgF2cermetfilmsaremainlycomposedofamor-phousMgF2matrixwithembeddedfaced-center-cubicAgnanoparticles.Itsuggeststhatthepercolationthresholdshouldbearoundwt.20%ofAgcontent.
简介:Nitridatedβ-Ga_2O_3(100)substratewasinvestigatedasthesubstrateforGaNepitaxialgrowth.Theeffectsofnitridationtemperatureandsurfaceroughnessofβ-Ga_2O_3wafersontheformationofGaNwerestudied.Itwasfoundthatthemostoptimizednitridationtemperaturewas900°C,andhexagonalGaNwithpreferredorientationwasproducedonthewell-polishedwafer.Thenitridationmechanismwasalsodiscussed.
简介:AprototypeRamanlidarwasdesignedformonitoringtroposphericCO_2profileandotherscientificin-vestigations.ThethirdharmonicofNd:YAGlaser(354.7-nmwavelength)wasusedasstimulatedlightsourcetoprovidenighttimemeasurements.FilterwithhighrejectionratioperformancewasusedtoextractCO_2RamansignalsfromRayleigh-Miescatteringsignalseffectively.Toimprovetherealtimemonitoringfunction,atwo-channelsignalcollectionsystemwasdesignedtocollectCO_2andN_2Ramanscatteringsig-nalssimultaneously.TheN_2Ramanscatteringsignalswereusedtoretrieveaerosolextinctioncoefficient.TypicalfeaturesofCO_2concentrationprofileandaerosolextinctioncoefficientinHefeiwerepresented.ThemixingratioofatmosphericCO_2inHefeicanreachabout360-400ppmv.