简介:ElectronleakagestillneedstobesolvedforInGaN-basedblue-violetlaserdiodes(LDs),despitethepresenceoftheelectronblockinglayer(EBL).Toreducefurtherelectronleakage,anewstructureofInGaN-basedLDswithanInGaNinterlayerbetweentheEBLandp-typewaveguidelayerisdesigned.TheopticalandelectricalcharacteristicsoftheseLDsaresimulated,anditisfoundthattheadjustedenergybandprofileinthenewstructurecanimprovecarrierinjectionandenhancetheeffectiveenergybarrieragainstelectronleakagewhentheIncompositionoftheInGaNinterlayerisproperlychosen.Asaresult,thedeviceperformancesoftheLDsareimproved.