简介：Theadiabaticelectrontransportistheoreticallystudiedinazigzaggraphenenanoribbon(ZGNR)junctionwithtwotime-dependentpumpingelectricfields.BymodelingaZGNRp–njunctionandapplyingtheKeldyshGreen’sfunctionmethod,wefindthatapumpedchargecurrentisflowinginthedeviceatazeroexternalbias,whichmainlycomesfromthephoton-assistedtunnelingprocessandthevalleyselectionruleinaneven-chainZGNRjunction.ThepumpedchargecurrentanditsONandOFFstatescanbeefficientlymodulatedbychangingthesystemparameterssuchasthepumpingfrequency,thepumpingphasedifference,andtheFermilevel.AferromagneticZGNRdeviceisalsostudiedtogenerateapurespincurrentandafullypolarizedspincurrentduetothecombinedspinpumpeffectandthevalleyvalveeffect.Ourfindingmightpavethewaytomanipulatethedegreeoffreedomofelectronsinagraphene-basedelectronicdevice.

简介：Cell-celljunctionsinthecochleaarehighlycomplexandwellorganized.Theroleofthesejunctionsistomaintainstructuralandfunctionalintegrityofthecochlea.Inthisreview,wedescribeclassificationofcelljunction-associatedproteinsidentifiedwithinthecochleaandprovideabriefoverviewofthefunctionoftheseproteinsinadherentjunctions,gapjunctionsandtightjunctions.

简介：单个分子的梭连接是一个种nanoscale机电的通道系统。在这个连接，一个分子的岛震荡取决于它的充电职业，并且这充电依赖者摆动通过分子的岛导致电子通道的调整。这份报纸在单个分子的梭连接在当前的、射击噪音的学习和电子的decoherence上考察最近的开发。我们将用典型系统模型，在这个话题上给详细讨论理论充分量主人方程和Aharonov-Bohm干涉仪。

简介：UsingthedensityfunctionaltheoryandthenonequilibriumGreen’sfunctionmethod,westudiedthefinite-biasquantumtransportinaCr/graphene/Crmagnetotunneljunction(MTJ)constructedbyasinglegraphenelayersandwichedbetweentwosemi-infiniteCr(111)electrodes.Wefoundthatthetunnelingmagnetoresistance(TMR)ratiointhisMTJreached108%,whichisclosetothatofaperfectspinfilter.Underanexternalpositivebias,wefoundthattheTMRratioremainedconstantat65%,incontrasttoMgO-basedMTJs,theTMRratiosofwhichdecreasewithincreasingbias.TheseresultsindicatethattheCr/graphene/CrMTJisapromisingcandidateforspintronicsapplications.

简介：Anoveldiodestring-triggeredgated-PiNjunctiondevice,whichisfabricatedinastandard65-nmcomplementarymetal-oxidesemiconductor(CMOS)technology,isproposedinthispaper.Anembeddedgated-PiNjunctionstructureisemployedtoreducethediodestringleakagecurrentto13nA/μminatemperaturerangefrom25°Cto85°C.Toprovidetheeffectiveelectrostaticdischarge(ESD)protectioninmulti-voltagepowersupply,thetriggeringvoltageofthenoveldevicecanbeadjustedthroughredistributingparasiticresistanceinsteadofchangingthestackeddiodenumber.