简介:Cu和Ni原子经历liquid–solidelectromigration(L-S他们)的散开行为用Cu/Sn/Ni被调查在5.0×103在250°C的2。电子的流动方向显著地影响Cu和Ni原子的跨solder相互作用,即在顺风的散开下面,Cu和Ni原子能扩散到相反的接口;当在迎风的散开,Cuatoms然而并非Ni下面原子能扩散到相反的接口时。当电子从Cu流动到Ni时,仅仅Cu原子扩散到相反的阳极Ni接口,导致从Ni3Sn4进(Cu,Ni)6Sn5并且进进一步[(Cu,Ni)6Sn5+Cu6Sn5],当noNi原子扩散到相反的阴极Cu接口并且这样时界面的Cu6Sn5留下了。从Ni的Whenelectrons流动到Cu,Cu和Ni原子扩散到相反的接口,resultingin从起始的Cu6Sn5进(Cu,Ni)6Sn5并且进进一步[(Cu,Ni)6Sn5+(Ni,Cu)3在阳极Cu接口的Sn4]当时那从起始的Ni3Sn4进(Cu,Ni)6Sn5并且进进一步(Ni,Cu)3在阴极Ni接口的Sn4损坏,电子比另外的方法从Cu流动到Ni是更多的。
简介:EnthalpyofReactionsinY-Ba-Cu-OSystemShaWei沙维(Departmentof.MaterialsScienceandMetallurgy,UniversityofCambridge.U.K.)Received17...
简介:IntroductionTungsten-copperalloypowdersareusedinmanyfieldsonaccountofthehighelectricandthermalconductivitiesofcopperandhighmeltingpointoftungsten.W-Cupowders,aspreparedconventionallybymeansofinfiltration,hasthedisadvantageofinhomogeneityinmicrostructure,andaredifficulttoworkwithaftersintering.
简介:Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.