简介:Aneworganicsemiconductortartaricaciddopedsaltofemeraldinepolyaniline(PANI-C4H6O6)hasbeenobtainedbythemethodofoxidativepolymerizationofmonomericanilinewithammoniumpersulfateinacidicsolution.ThestructurewascharacterizedbyFourierTransformInfraredtechnique(FTIR)andX-raydiffraction(XRD).Thetemperaturedependencedcconductivityδdc(T)showsasemiconductorbehaviorandfollowsthequasionedimensionalvariablerangehopping(Q1D-VRH)model.Dataonδdc(T)arealsodiscussed.
简介:Photoluminescenceevaluationofpandntype6H-SiCsampleshasbeendone.Resultsshowthatatlowtemperaturethephotoluminescenceof6H-SiCisclearlydominatedbydonor-acceptorpairtransitions,insomecase,free-to-donortransitioncouldbeobservedathighertemperature.Thethermalquenchingprocessesofthephotoluminescencehavebeeninvestigatedtodeterminethepossibleionizationnenergiesoftheimpurities.
简介:ThemicrostructureandopticalpropertiesofaburiedlayerformedbyO+(200keV,1.8×1018/cm2)andN+(180keV,4×1017/cm2)co-implantationandannealedat1200℃for2hhavebeeninvestigatedbyAugerelectron,IRabsorptionandreflectionspectroscopicmeasurements.TheresultsshowthattheburiedlayerconsistsofsilicondioxideandSiOx(x<2)andthenitrogensegregatestothewingsoftheburiedlayerwhereitformsanoxynitride.BydetailtheoreticalanalysisandcomputersimulationoftheIRreflectioninterferencespectrum,therefractiveindexprofilesoftheburiedlayerwereobtained.
简介:我们认识到NiCo2由激光照耀的O4nanomaterialsNiCo2有不同集中的O4暂停。结果表明同样准备的样品是有568nm和优异dispersity的最大的平均尺寸的需要的范围,它在0.30JDS的精力密度被获得)。Obwohl死ErkrankungenvieleGemeinsamkeitenaufweisen(Fiebersch浭湥慦獳湵?浉畭歮浯牰浯瑩楴牥湵?楢杲?浩敭?楥?牥???獥删獩歩????釧????????闧?郦????駥?釧?闦??駥?跧???闦?臧?臧????駥膹?郦?飧?蓦???釧?釧?蓦???跧?觧??跧?????觧?釧??闦??闦?觧?郧?闦???跧???釧????触?跧??趥觧?鷦??
简介:UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.
简介:Organicmultiplequantumwells(OMQWs)consistingofalternatinglayersoforganicmaterialshavebeenfabricatedfromtris(8-hdroxyquinoline)aluminum(Alq)and2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)byamultisource-typehigh-vacuumorganicmoleculardeposition.Fromthesmall-angleX-raydiffractionpatternsofAlq/PBDOMQWs,aperiodicallylayeredstructureisconfirmedthroughtheentirestack.TheAlqlayerthicknessintheOMQWswasvariedfrom1nmto4nm.Fromtheopticalaborption,photoluminescenceandelectroluminescencemeasurements,itisfoundthattheexcitonenergyshiftstohigherenergywithdecreasingAlqlayerthickness,ThechangesoftheexcitonenergycouldbeinterpretedastheconfinementeffectsofexcitonintheAlqthinlayers.Narrowingoftheemissionspectrumhasalsobeenobservedfortheelectroluminescentdevices(ELDs)withtheOMQWsstructureatroomtemperature.
简介:Modelingandreasoningondomaincontextsplayakeyroleforaddingintelligencetocommunicationservices,andtheapproachofcapability-basedrequirementengineeringensuresthescientificityandaccuracyofrequirementelicitation.Thispaperpresentsacapability-basedcontextontologymodelingapproachforcommandandcontrol,communication,computer,intelligence,surveillanceandreconnaissance(C4ISR)communication.Primarily,acapability-basedC~4ISRcommunicationmeta-conceptmodelandaC~4ISRcommunicationcontextmeta-ontologyareconstructed.ThecontextontologyisestablishedundertheconstraintsoftheC~4ISRcommunicationcontextmeta-ontology,andfurthermore,algorithmsareproposedtosupportcontextreasoningbasedondescriptionlogic.Acasestudyispresentedtodemonstrateapplicabilityoftheproposedmethod.
简介:Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.
简介:Inthispaper,wedemonstratetheacetylehe(C2H2)sensorwithhighsensitivityusingahollow-corephotonicbandgapfiber(HC-PCF).ExperimentsformeasuringC2H2concentrationsingasmixtureareperformed.Usinga2m-longHC-PCFasgascell,thespectrumofacetyleneatn1+n3bandhasbeenmeasured,andtheP11-branchhasbeenselectedforthepurposeofsensing.Aminimumdetectivityof143partspermillionbyvolume(ppmv)forthesystemconfigurationisestimated.
简介:[1]CaoYY,LamsJ.RobustH∞ControlofUncertainMarkovianJumpSystemswithTime-Delay.IEEETrans.Automat.Contr.,2000,45(1):77~83.[2]DoyleJC,Glover,KhargonekarPP,etal.State-SpaceSolutionstoStandardH2andH∞ControlProblems.IEEETrans.Automat.Contr.,1989,34(8):831~847.[3]FridmanE,ShakedU.H∞-normandInvariantManifoldsofSystemswithStateDelays.Sys.&Contr.Lett.,1999,36(2):157~165.[4]GeJ,FrankPM,LinCF.RobustH∞StateFeedbackControlforLinearSystemswithStateDelayandParameterUncertainty.Automatica,1996,32(6):1183~1185.[5]HirataM,LiuKZ,SatoT,etal.ASolvabilityConditionofanExtendedH∞ControlProblemUsingRiccatiInequalities.Int.J.Contr.,2000,73(4):265~275.[6]HmamedA.FurtherResultsontheRobustStabilityofUncertainTime-DelaySystems.Int.J.Syst.Sci.,1991,22(3):605~619.[7]IwasakiT,Skelton,E.AllControllersfortheGeneralH∞ControlProblem:LMIExistingConditionsandState-SpaceFormulas.Automatica,1994,42(7):1307~1317.[8]LeeB,LeeJG.RobustStabilizationofLinearDelayedSystemswithStructuredUncertainty.Automatica,1999,35(6):1149~1154.[9]LeeKH,MoonYS,KwonWH.RobustStabilityAnalysisofParametricUncertainTime-DelaySystems.InProceedingofIEEEConferenceonDecisionandControl,Tampa,FL,1998:1346~1352.[10]LehmanB,KhalilS.DelayIndependentStabilityConditionsandDecayEstimatesforTime-VaryingFunctional.IEEETrans.Automat.Contr.,1994,39(8):1673~1676.[11]MahmoudMS,Al-MuthairiNF.DesignofRobustControllersforTime-DelaySystems.IEEETrans.Automat.Contr.,1994,39(2):159~161.[12]MoriETN,KuwaharaM.AwaytoStabilizeLinearSystemswithDelayedState.Automatica,1983,19(5):571~573.[13]NiculescuSI,andAnnasuamyAM.ASimpleAdaptiveControllerforPositive-RealSystemswithTime-Delay.ProceedingoftheAmericanControlConference,Chicago,Illi
简介:Recently,Changetal.proposedaSudoku-basedsecretimagesharingscheme.TheyutilizedtheSudokugridtogeneratemeaningfulshadowimages,andtheirschemesatisfiedallessentialrequirements.BasedonChangetal.'sscheme,weproposeanovel(n,n)secretimagesharingschemebasedonSudoku.Intheproposedscheme,asecretimagecanbesharedamongndifferentcoverimagesbygeneratingnshadowimages,andthesecretimagecanbereconstructedwithoutdistortionusingonlythesenshadowimages.Also,theproposedschemecansolvetheoverflowandunderflowproblems.Theexperimentalresultsshowthatthevisualqualityoftheshadowimagesissatisfactory.Furthermore,theproposedschemeallowsforalargeembeddingcapacity.
简介:HandoverinDigitalVideoBroadcastingforHandhelds(DVB-H)aimstoprovidecontinuousmobilebroadcastingserviceswhenauseristravelingthroughcellboundaries.Agoodhandovercontrolcanimprovethepowerefficiencyandgainmuchbetterreceptionquality.ThisletterprovidesanovelapproachforDVB-HhandoverbasedonDVB-H/UniversalMobileTelecommunicationsSystem(UMTS)hybridnetwork,whichmovesthemainhandoverfunctionfromtheterminalstothenetworks,sothatitreducestheoperationcomplexityoftheterminalsandincreasesthepowersaving.WhentheterminalcannotreceivetheDVB-Hsignalinthetransmissionshadowareasorbecauseofsomeotherreasons,theUMTSnetworksmayofferthesameservicetouserstomaketheservicecontinuous.AstheUMTSnetworkshavethetopologyoftheDVB-Hnetworks,bycommunicatingwiththeterminals,theUMTSnetworkscanhelptheterminalstopredictthehandover,andavoidunnecessaryhandover.
简介:Thea-Si∶H/SiNx∶HsampleseriesareinvestigatedbymeansofRamanscatteringtechnique(RST).Theresultshowsthatduetothestructuralmismatchbetweena-Si∶Handa-SiNx∶H,severeinduceddistortionsareproducedintheinterfaceoftheheterojunction,andtheseinduceddistortionstendtowardsacertainenergystate.Theorderingoftheinterfacestructuredependsontheperiodicnumberofmultilayerthinfilms.