简介:TheCW-CO2laserdrivengasreactionwasappliedtopreparenano-sizedSiCpowder,SiH4andC2H4ofhighpurties,asstartingmaterials,weremixedtacertainrationandintroducedintotheresactioncell.Thegasesflewacrossthelaserbeamorthogonallyandthuswereheatedbylaserbeam.Thenano-sizedSiCultrafinepowderwswereformedthroughthermicgasreation.Thefinalproductivityofthisprocesswas97%,Theobtainedpowderswerecharacterizedandanalyzed.ChemicalanalysisrevealedthattheSiCcontentwas95.38wt%,Oxygen,theprimaryimpurity,weighted1.32%whiletraceimpurities,suchascalcium,magnesiumandothermetals,wereonly0.03%,XRD,XPSandTEMindicatedthatthpowderparticleswerenearlysphericalandnotagglomerated.Theparticlesizerangedfrom10nmto25nmwithanaverageof15nm,Theparticlestredtobenoncrystalline.
简介:ThediamondfilmshavebeendepositedbythehotfilamentCVDmethodonmolybdenumsubstratesfromthemixturereactantgasofacetoneandhy-drogen.Thesurfacemorphologiesoftheobtaineddiamondfilmsundervariousde-positionconditionshavebeenobservedbyscanningelectronmicroscope(SEM).Theexperimentalresultsstronglyindicatethatthesurfacemorphologiesofthere-sultingfilmshavecloselyrelatedtothedepositionconditions,i.e.,reactionpres-sure.Formolybdenumsubstrates,underthelowerreactionpressurethesurfacemorphologiesofthegrainscomprisingtheresultingfilmsmainlydisplaythesmallsinglecrystalcubo-octahedronanddoublesmallcrystalcubo-octahedron;underthehigherreactionpressure,thesurfacemorphologiesmainlydisplaythelargecauliflower-like.TheseresultsshowthattherearevariouscrystalhabitsforCVDdiamondundervariousdepositionconditions.
简介:碳nanotubes(CNT)被综合由电加热催化化学药品使用乙炔的免职方法(CCVD)(C2H2)同样碳来源和氮(N2)被electroplating作为搬运人气体,和镍催化剂装载。电的加热方法,作为一个新方法,由使用它的传导性直接触电碳纤维。形态学和结构CNT被描绘由SEM和TEM,和碳的表面性质在CNT的生长前后的纤维被拉曼光谱学描绘。试验性的结果表演电加热方法是一个新方法生产CNT,和罐头成长在一短时间,结晶化度和表面的很多CNT平均雏晶碳的尺寸在CNT的生长以后增加的纤维上它。另外,当,装载催化剂的electroplating能也被使用装载方法的理想,能控制数字,由控制plating的镍粒子的形状,和分发预定。
简介:IntroductionIn2O3·Snfilmshavehightransparency(>95%)withinthevisiblespectralregion,lowresistivity(10-2—10-4ohm·cm)atroomtemperatureandsuperiorthermalstability.Thesefilmshavebeenappliedtosolarcells,electronicsandphotoelectronicsfields.Inrecentyears,organometallic-CVDmethodhasemergedasasuccessfulalternatetothephysicalmethodsandgeneralCVDforthegrowthofthesefilms.TheMO-CVDtech-
简介:Chemicalvapordeposition-tungsten(CVD-W)coatingcoveringthesurfaceoftheplasmafacingcomponent(PFC)isaneffectivemethodtoimplementthetungstenmaterialasplasmafacingmaterial(PFM)infusiondevices.ResidualthermalstressinCVD-Wcoatingduetothermalmismatchbetweencoatingandsubstratewassuccessfullysimulatedbyusingafiniteelementmethod(ANSYS10.0code).Thedepositionparametriceffects,i.e.,coatingthicknessanddepositiontemperature,andinterlayerwereinvestigatedtogetadescriptionoftheresidualthermalstressintheCVD-Wcoating-substratesystem.AndtheinfluenceofthesubstratematerialsonthegenerationofresidualthermalstressintheCVD-WcoatingwasanalyzedwithrespecttotheCVD-WcoatingapplicationasPFM.ThisanalysisisbeneficialforthepreparationandapplicationofCVD-Wcoating.
简介:Throughournewly-developed'chemicalvapordepositionintegratedprocess(CVD-IP)'usingcarbondioxide(CO2)astherawmaterialandonlycarbonsourceintroduced,CO2couldbecatalyticallyactivatedandconvertedtoanewsolid-formproduct,i.e.,carbonnanotubes(CO2-derived)ataquitehighyield(thesingle-passcarbonyieldinthesolid-formcarbon-productproducedfromCO2catalyticcaptureandconversionwasmorethan30%atasingle-passcarbon-base).Forcomparison,whenonlypurecarbondioxidewasintroducedusingtheconventionalCVDmethodwithoutintegratedprocess,nosolid-formcarbon-materialproductcouldbeformed.IntheadditionofsaturatedsteamatroomtemperatureinthefeedforCVD,thereweremuchmoreend-openingcarbonnano-tubesproduced,ataslightlyhighercarbonyield.Theseinspiringworksopenedaremarkableandalternativenewapproachforcarbondioxidecatalyticcapturetosolid-formproduct,comparingwiththatofCO2sequestration(CCS)orCO2mineralization(solidification),etc.Asaresult,therewasmuchlessbodyvolumeandalmostnogreenhouseeffectforthissolid-formcarbon-materialthanthoseofprimitivecarbondioxide.
简介:Siliconnitridenanoparticlesweresynthesizedbyradio-frequency(RF)plasmachemicalvapordeposition(PCVD)usingsilicontetrachlorideandammoniaasprecursors,andargonascarriergas.Byassumingchemicalthermodynamicequilibriuminthesystem,acomputerprogrambasedonchemicalthermodynamicswasusedtocalculatethecompositionsofthesystematdifferentinitialconcentrationsandfinaltemperatures.Atfirst,fiveelementsandthirty-fourspecieswereconsidered.Theeffectsoftemperatures,andconcentrationsofammonia,hydrogenandnitrogenontheequilibriumcompositionswereanalyzed.Itwasfoundthattheoptimalreactiontemperaturerangeshouldbe1200to1500KtoobtainthehighestconversionandyieldofSi3N4.Theinletpositionofammoniashouldbelowerthanthatofsilicontetrachloride,andbothshouldbelocatedatthetailoftheplasmatorch.Thebestmoleratioofammoniatosilicontetrachloridewasfoundtobeabout6.Later,theinfluencesofwater(andoxygen)wereconsidered,and17additionalspecieswereincludedinthecomputations.ItwasfoundthatoxygenorwatercontentintherawmaterialsshouldbeaslowaspossibleinordertohavehighnitridecontentintheproducedSi3N4.Nitrogenorhydrogenmightbeusedtoreplacesomeorevenalltheargontoimprovetheyieldofsiliconnitrideandreducethecost.Theratioofammoniatosilicontetrachlorideshouldbehighenoughtoobtainhighconversion,butnotexcessivelyhightoreducetheoxygencontentduetotheexistenceofwaterinammonia.Thesimulatedresultswereverifiedbyexperiments.
简介:摘要金刚石具有许多优异的性能,但天然金刚石的价格也比较昂贵。金刚石薄膜的各种性质与天然金刚石几乎相同,具有非常广阔的工业前景。本文采用乙醇和氢气作为工作气源,利用微波等离子体化学气相沉积法,在较低的温度下制备了金刚石薄膜,并研究了乙醇浓度、反应气压对金刚石薄膜生长的影响。
简介:摘要目的综合评估β受体阻滞剂对慢性阻塞性肺疾病(COPD)合并心血管疾病(CVD)患者肺功能、急性加重再住院率及死亡率的影响。方法制订文献纳入标准及检索策略,计算机检索Pubmed、Medline等外文数据库及中国知网、万方等中文数据库等。收集研究β受体阻滞剂治疗COPD合并CVD患者对于肺功能改变、急性加重再住院率及死亡率等的相关文献,应用STATA 12.0软件进行meta分析。结果检索到文献4 733篇,经筛选最终纳入34篇,样本总量1 415 791例。meta分析结果显示,β受体阻滞剂对COPD患者肺功能无明显影响,治疗前后第1秒用力呼气容积占预计值百分比、第1秒用力呼气容积/用力肺活量变化量与对照组变化量的差值合并值WMD及其95%CI为0.97(0.10~1.84)、-0.14(-1.47~1.18)。同时可以降低死亡率(OR=0.65,95%CI:0.51~0.83)以及急性加重再住院率(OR=-0.64,95%CI:0.43~0.97)。结论β受体阻滞剂对COPD合并CVD肺功能无不良影响,不仅可以降低急性加重再住院风险,还可降低死亡风险。
简介:以甲烷(CH4)为碳源先驱体,以三维针刺碳纤维预制体为沉积基体,研究了化学气相沉积(chemicalvapordeposition,CVD)工艺过程中沉积时间、沉积压力以及预制体厚度对热解碳界面层沉积厚度的影响,并在此基础上优化了在碳纤维表面制备合适厚度的热解碳界面层所需的CVD工艺参数。结果表明,针对现有反应腔体,5mm厚碳纤维预制体试样,采用1000℃的沉积温度,CH4流速500ml/min,沉积时间10h,沉积压力5kPa,可在预制体内外碳纤维表面沉积得到厚度合适的热解碳界面层;当碳纤维预制体厚度增至10mm,则沉积时间应延长至15h,压力维持不变,可沉积得到合适厚度的界面层。
简介:GaNmicrocrystallinegrainsweregrownbyhot-wallchemicalvapordepositiononSi(111)substrate.Thesegrainswithdiametersof2-4μmweredetectedbyscanningelectronmicroscopy.X-raydiffraction,Fouriertransformationinfraredtransmissionspectroscopyandphotoluminescencewereusedtoanalyzethestructure,compositionandtheopticalpropertiesofthesamples.TheresultsshowthatthemicrocrystallinegrainsarehexagonalwurtziteGaN,andthepropertyofthegrainswasgreatlyaffectedbythegrowthtime.
简介:采用HSiCl3—NH3—N2(稀释气体)体系在石英陶瓷基板上通过低压化学气相沉积(LPCVD)法沉积出了Si3N4涂层,研究了工艺条件对涂层沉积速率的影响。结果表明,在没有稀释气体的情况下,随着沉积温度升高,Si3N4涂层的沉积速率逐渐增加,在850℃附近达到最大值,随着反应温度的进一步升高,涂层沉积速率下降。当存在稀释气体时,在所选温度范围内随着沉积温度的升高,Si3N4涂层的沉积速率一直增大,反应的表观活化能约为222kJ/mol。随着原料中NH3/HSiCl3流量比值的增大,Si3N4涂层的沉积速率逐渐增加,随后稳定,但稍有下降趋势。在所选稀释气体流量范围内,Si3N4涂层的沉积速率随着稀释气体流量的增加而增大。