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简介:In_2O_3∶SnO_2(ITO)thinfilmswerefabricatedonthesubstrateofflexiblepolyethyleneterephthalate(PET)byDCmagnetronsputteringfromaceramictargetofIn_2O_3/SnO_2(90∶10).PropertiesofthethinfilmswerecharacterizedbyX-raydiffraction(XRD),four-pointprobe,Hall-effectmeasurement,UV-Visspectrophotometer,andscanningelectronmicroscopy(SEM).Theeffectsofsputteringpressure,oxygenpartialpressureanddepositiontemperatureonpropertiesofmicrostructureandoptoelectronicspropertiesofPET/ITOthinfilmswereinvestigatedindetail.High-qualityITOthinfilmsonPETsubstrateswiththeresistivityaslowas8.5×10-4Ω·cmandtheopticaltransmittanceover80%inthevisiblespectrumrangewereobtained.
简介:透明的传导性的铝做了锌氧化物(ZnO:艾尔,偶氮)电影被rf(收音机频率)在玻璃底层上准备磁控管从ZnO劈啪作响:3wt%艾尔2O3陶器的目标。氩气体压力的效果(PAr)与小变化被调查在这些电影的电、光、结构的性质上理解影响。使用X光检查衍射(XRD)并且扫描电子显微镜学(SEM)的结构的考试证明ZnO:薄电影是的艾尔(002)面向。抵抗力价值被四点的探查与5.76穩摥甠楳杮愠?灯楴業敺?票牤瑯敨浲污洠瑥潨?倠牵?桰獡?景?㈱?眠獡朠瑯愠?的最低抵抗力测量?潣灭牡瑡癩汥?潬敷?整灭牥瑡牵?挨愮??‰??楳瑳?景漠敮?睴?琠牨敥?牯映畯?慬敹獲漠?敭慴?晲捡獥瀠慬散?湩琠敨渠慥?楦汥?敲楧湯漠??業牣獯牴灩瀠瑡档愠瑮湥慮?桔?湡整湮?慲潤敭猠獹整?慧湩椠?浩牰癯摥戠????潣灭牡摥琠?桴?慰'?湡整湮?污湯?愠摮琠敨爠摡慩楴湯瀠瑡整湲栠污?吗潰敷?敢浡楷瑤?獩爠摥'转棳_??L潳灲楴湯瀠慥獫眠牥?獡楳湧?敧愠敲?吠敨栠杩汨?晥楦楣湥?L潳灲楴湯漠?
简介:金属涂的cenospheres广泛地在工业被使用了。不同涂层方法导致不同典型金属电影。由化学涂层的cenosphere上的金属电影不看起来很光滑,展出积累的金属和表面上的大头针洞并且离开某点uncoated。同时,金属电影紧没被吸收到cenospheres上并且是容易的开脱皮。然而,磁控管劈啪作响准备的金属电影是紧缩的,光滑并且在大头针洞外面。这部电影有好亲密关系到cenosphere表面。甚至当cenosphere被压碎时,如此的电影不用它分开。两个都,金属电影给一样的XRD模式,显示金属的水晶结构由这二个方法拍摄是一样。化学涂层是一个复杂过程并且有害环境,而是它适合极其细小的粉末涂层(粒子尺寸能是不到2)。磁控管劈啪作响的方法是环境的友好并且快速工作,但是这个方法要求特殊设计的设备并且不为极其细小的粉末工作。如果粒子尺寸是不到30,涂层过程是难的继续。
简介:Theinfluenceofthehystereticbehaviourinreactivesputteringwithapurealuminiumtargetinthepresenceofargonandoxygenplasmaontransmittanceandsurfacefreeenergyofaluminiumoxidefilmswasinvestigatedbyplasmaopticalemissionspectroscopytechnology.Theevolutionsofaluminium,andaluminiumoxideemissionlinesasfunctionsofoxygenflowrateatconstantpowerandpressurewerestudied.Asteeptransitionfromthemetallicsputteringtothecompoundsputteringwasobserveduponincreasingtheoxygenflowratefrom0.0SCCMtoabove2.0SCCM.Thenanoptimaldepositionzonewasobtainedthroughanalyzingthehystereticcurvesofaluminiumandaluminiumoxideemissionlines.TheevolutionofcrystalstructuresofsampleswasdiscernedbyX-raydiffractionspectradata.EnergydispersiveX-rayspectroscopydataalsodemonstratetherelationshipbetweenthechemicalcompositionsofaluminiumoxidefilmsandthehystereticbehaviour.Thefilmdepositedbetween1.5SCCMand2.0SCCMoxygenflowratedisplaysanoptimalandstoichiometicatomicratioofOtoAlandmassratioofOtoAl.ThechangesinthetransmittanceofsampleswerediscoveredtodependontheoxygenflowratebyUV-VIStransmittancespectra,andthechangesinsurfacefreeenergywerestudiedbycontactanglemeasurement.
简介:ThepurposeofthisstudywastoinvestigatetheeffectsofZrinterlayeronthestructureandmechanicalpropertiesofTiAlNfilms,whichweredepositedontheM2high-speedsteelsubstratesbymeansofplasma-enhancedmagnetronsputtering.TheresultshowsthatthecrystalorientationofZr/TiAlNfilmsissimilartothatofsingle-layeredTiAlNfilms,butthedifferenceisthatAlN(111)ofZr/TiAlNfilmsdisappearscompletely.WithrespecttoZrinterlayer,thetexturecoefficientofZr/TiAlNfilmsisapproximately1.Zr/TiAlNfilmsexhibitacompactisometricstructure,whichisdistinctlydifferentfromthecolumnarstructureexistinginthesingle-layeredTiAlNfilmsandTi/TiAlNfilms.ThehardnessandH3/E*2ofZr/TiAlNfilmsare,respectively,enhancedtobe36.6GPaand0.147.Withafewcracksemergingaroundtheindention,theadhesionstrengthofTiAlNfilmsisobviouslyadvancedbyaddingZrmetalinterlayer.
简介:AluminumfilmscoatedonDIsteelsheetswerepreparedbydirectcurrent(DC)magnetronsputtering.Theinfluenceofthedepositionconditionsandfilmthicknessontheformabilityofcoatedsteelsheetswasstudied.TheresultsofthecuppingtestanddrawingtestshowthatthesubstratetemperatureandthicknessofAlfilmsarethekeyfactorsthataffectAladhesionandformabilityofcoatedsteelsheets.AdhesionbecameworsewhenthethicknessofAlsheetswasmorethan2μm.Andformabilitywasimprovedremarkablywhenthesubstratetemperaturewasincreasedto200℃.
简介:Zn_(1-x)Cu_xOthinfilmsweresynthesizedbytheradiofrequency(RF)magnetronsputteringtechniqueusingaZnOtargetcontainingdifferentpiecesofsmallCu-chips.X-raydiffraction(XRD)andscanningelectronmicroscopy(SEM)wereemployedtoanalyzethecrystallineandmicrostructureofthefihn,andX-rayphotoelectronspectroscopy(XPS)wasusedtoestablishthebondingcharacteristicsandoxidationstatesofcopperinsidetheZnOhost.Roomtemperature(RT)ferromagnetismwasobservedintheZn_(1-x)Cu_xOfilmsbyaQuantumDesignsuperconductingquantmninterferencedevice(SQUID)andthesaturationmagneticmomentofthefilmswasfoundtodecreasewiththeincreaseinCucontent.
简介:ZnMn2为抵抗随机存取存储器(RRAM)的O4电影被磁控管劈啪作响与不同设备结构制作。I-V特征,抵抗切换行为,耐力和ZnMn2O4电影被调查。ZnMn2象底部电极的O4电影,使用的希腊语的第二十三个字母和磅,展出双极的抵抗切换(BRS)行为处于低抵抗状态(LRS)处于高抵抗状态(HRS)和细丝传导机制由space-charge-limited传导(SCLC)统治了机制,但是ZnMn2用底部电极展出双极、单极的抵抗切换行为的n-Si的O4电影在幼虫由Poole-Frenkel(P-F)传导机制控制了Ag/ZnMn2O4/p-Si设备拥有最好的耐力和保留特征,交换周期的稳定的重复的数字在是超过1000,保留时间比106秒长。然而,最高的RHRS/R104的LRS比率和最低V在和V离开3.0的,V在Ag/ZnMn2O4/Pt设备。不过Ag/ZnMn2O4/n-Si设备也拥有最高的RHRS/R104,的LRS比率但是V在,V离开,RHRS和R象差的耐力一样的LRS,并且保留特征。
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简介:AsinteredTi_(13)Cu_(87)targetwassputteredbyreactivedirectcurrent(DC)magnetronsputteringwithagasmixtureofargon/nitrogenfordifferentsputteringpowers.Titanium-copper-nitrogenthinfilmsweredepositedonSi(111),glassslideandpotassiumbromide(KBr)substrates.Phaseanalysisandstructuralpropertiesoftitanium-copper-nitrogenthinfilmswerestudiedbyX-raydiffraction(XRD).ThechemicalbondingwascharacterizedbyFouriertransforminfrared(FTIR)spectroscopy.TheresultsfromXRDshowthattheobservedphasesarenano-crystallitecubicantirheniumoxide(antiReO_3)structuresoftitaniumdopedCu_3N(Ti:Cu_3N)andnanocrystallitefacecenteredcubic(fcc)structuresofcopper.ScanningelectronmicroscopyandenergydispersiveX-rayspectroscopy(SEM/EDX)wereusedtodeterminethefilmmorphologyandatomictitanium/copperratio,respectively.Thefilmspossesscontinuousandagglomeratedstructurewithanatomictitanium/copperratio(~0.07)belowthatoftheoriginaltarget(~0.15).Thetransmittancespectraofthecompositefilmsweremeasuredintherangeof360nmto1100nm.Filmthickness,refractiveindexandextinctioncoefficientwereextractedfromthemeasuredtransmittanceusingareverseengineeringmethod.Inthevisiblerange,thehigherabsorptioncoefficientofthefilmspreparedatlowersputteringpowerindicatesmorenitrificationincomparisontothosepreparedathighersputteringpower.ThisisconsistentwiththeformationoflargerTi:Cu_3Ncrystallitesatlowersputteringpower.Thedepositionratevs.sputteringpowershowsanabrupttransitionfrommetallicmodetopoisonedmode.Acomplicatedbehaviorofthefilms'resistivityuponsputteringpowerisshown.