简介:NanosizedGa-containingZSM-5zeoliteswerepreparedviaisomorphoussubstitutionandimpregnationfollowedbycharacterizedusingvarioustechniques.Thecatalyticperformanceofthezeolitesforthearomatizationof1-hexenewasinvestigated.TheresultsindicatethatisomorphoussubstitutionpromotestheincorporationofGaheteroatomsintotheframeworkalongwiththeformationofextra-frameworkGaO+species([GaO+]a)thathavestrongerinteractionswiththenegativepotentialoftheframework.Inaddition,basedonthePy-IRresultsandcatalyticperformance,the[GaO+]aspecieswithstrongerLewisacidsitesproducedabettersynergismwithmoderateBr?nstedacidsitesandthusimprovedtheselectivitytoaromaticcompounds.However,theimpregnationresultsintheformationofGa2O3phaseandsmallamountsofGaO+speciesthataremainlylocatedontheexternalsurface([GaO+]b),whichcontributetoweakerLewisacidsitesduetoweakerinteractionswiththezeoliteframework.During1-hexenearomatization,thenanosizedGaisomorphouslysubstitutedZSM-5zeolitesamples(Gax-NZ5)exhibitedbettercatalyticperformancecomparedtotheimpregnatedsamples,andthehighestaromaticyield(i.e.,65.4wt%)wasachievedovertheGa4.2-NZ5sample,whichcontainedwiththehighestGacontent.
简介:Weinvestigateeffectsofannealingonmagneticpropertiesofathick(Ga,Mn)Aslayer,andfindadramaticincreaseoftheCurietemperaturefrom65to115Kbypostgrowthannealingfora500-nm(Ga,Mn)Aslayer.AugerelectronspectroscopymeasurementssuggestthattheincreaseoftheCurietemperatureismainlyduetodiffusionofMninterstitialtothefreesurface.Thedouble-crystalx-raydiffractionpatternsshowthatthelatticeconstantof(Ga,Mn)Asdecreaseswithincreasingannealingtemperature.Asaresult,theannealinginducedreductionofthelatticeconstantismainlyattributedtoremovalofMninterstitial.
简介:Wereportthestudyofalowtemperatureclusterglassstatein5%Mn-dopedUGa3heavyfermioncompound.Thiscompoundtransformsfromaparamagneticstatetoaspin-clusterglassstate,whichisconfirmedbymeasuringthedcsusceptibilityandmagnetization.Theacsusceptibilityexhibitsafrequency-dependentpeakaroundTf,whichprovidesdirectevidenceoftheclusterglassstate.Byanalyzingthefield-dependentmagnetizationandfrequency-dependentacsusceptibilityindetail,wededucethatthiscompoundformsaspin-clusterglassstatebelowTf.
简介:Ni/SiO2andbimetallicNixGa/SiO2catalystswithdifferentNi/Gaatomicratios(x=10~2)wereinvestigatedfortheselectivehydrogenationofacetylene.ItwasfoundthatNixGa/SiO2showedhigherselectivitytoethylenethanNi/SiO2.ThisisattributedtotheformationNi-GaalloyandNi3Gaintermetalliccompound(IMC)wheretherewasachargetransferfromGatoNi,whichisfavorableforreducingtheadsorptionstrengthandamountofethyleneonNiatoms.Asaresult,theover-hydrogenation,theC–Cbondhydrogenolysisandthepolymerizationweresuppressed,andsubsequentlytheselectivitytoethylenewasenhanced.WiththedecreaseofNi/Gaatomicratio,theactivityandstabilityoftheNixGa/SiO2catalystsincreasedfirstandthendecreased,whiletheethyleneselectivitytendedtoincrease.Ni5Ga/SiO2exhibitedthebestperformance.Undertheconditionsof180°C,0.1MPa,andareactant(1.0vol%acetylene,5.0vol%H2and94vol%N2)withthespacevelocityof36,000mLh-1g-1,theacetyleneconversionmaintainedat100%onNi5Ga/SiO2during120htimeonstreamandtheselectivitytoethylenewas75%~81%afterreactionfor68h.ItwasalsofoundthattheformationofNi-GaalloyandNi3GaIMCsuppressedtheincorporationofcarbontoformNiCx,subsequentlyenhancingthecatalyststability.Additionally,withincreasingtheGacontent,thecatalystacidamountandstrengthtendedtoincrease,whichpromotedthepolymerizationandcarbondepositionandsothecatalystdeactivation.
简介:Grapheneanditsderivativeshaveattractedtremendousresearchinterestbecauseoftheiruniquecompositionandphysicochemicalproperties[1??3].However,thepotentialbiologicaltoxicityofGQDshasbecomeahealthriskbecauseoftheirinherentchemicalcompositionandnanoscaleproperties[4].Zebrafish(Daniorerio)isoneofthemostpromisinginvivomodelsystemsfortoxicitystudies[5].
简介:Inthispaper,theconductionband-edgenon-parabolicity(NP)andthecircularcross-sectionradiuseffectsonhydrogenicshallow-donorimpurityground-statebindingenergyinzinc-blende(ZB)InGaN/GaNcylindricalQWWsarereported.Thefinitepotentialbarrierbetween(In,Ga)NwellandGaNenvironmentisconsidered.Twomodelsoftheconductionband-edgenon-parabolicityaretakingintoaccount.Thevariationalapproachisusedwithintheframeworkofsinglebandeffective-massapproximationwithone-parametric1S-hydrogenictrialwave-function.ItisfoundthatNPeffectismorepronouncedinthewireofradiusequaltoeffectiveBohrradiusthaninlargeandnarrowwires.Moreover,thebindingenergypeakshiftstonarrowwireunderNPeffect.Agoodagreementisshowncomparedtothefindingsresults.
简介:AmassofGaNnanowireshasbeensuccessfullysynthesizedonSi(111)substratesbymagnetronsputteringthroughammoniatingGa2O3/Cofilmsat950C.X-raydiffraction,scanningelectronmicroscopy,highresolutiontransmissionelectronmicroscopeandFouriertransformedinfraredspectraareusedtocharacterizethesamples.Theresultsdemonstratethatthenanowiresareofsingle-crystalGaNwithahexagonalwurtzitestructureandpossessrelativelysmoothsurfaces.ThegrowthmechanismofGaNnanowiresisalsodiscussed.更多还原
简介:利用室温光致荧光谱(PL)研究金属有机物化学气相沉积(MOCVD)方法中温度参数对InP衬底上生长In0.53Ga0.47As/InP量子阱材料质量的影响.通过两组实验分别研究并分析了生长温度对In0.53Ga0.47As层和InP层材料质量的影响,得到了In0.53Ga0.47As层和InP层最佳生长温度分别为650℃和600℃.利用优化条件制备In0.53Ga0.47As/InP基PIN型探测器,得到器件的暗电流较优化前小2个数量级.